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TaCl5-C3H6-H2 계에서 TaC CVD 공정의 열역학 해석 KCI 등재 SCOPUS

TaC CVD Process in TaCl5-C3H6-H2 System

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한국재료학회지 (Korean Journal of Materials Research)
한국재료학회 (Materials Research Society Of Korea)
초록

An ultra-high temperature ceramic, tantalum carbide, has received much attention for its favorable characteristics: a superior melting point and chemical compatibility with carbon and other carbides. One drawback is the high temperature erosion of carbon/carbon (C/C) composites. To address this drawback, we deposited TaC on C/C with silicon carbide as an intermediate layer. Prior to the TaC deposition, the TaCl5-C3H6-H2 system was thermodynamically analyzed with FactSage 6.2 and compared with the TaCl5-CH4-H2 system. The results confirmed that the TaCl5-C3H6-H2 system had a more realistic cost and deposition efficiency than TaCl5-CH4-H2. A dense and uniform TaC layer was successfully deposited under conditions of Ta/C = 0.5, 1200 oC and 100 torr. This study verified that the thermodynamic analysis is appropriate as a guide and prerequisite for carbide deposition.

목차
Abstract
 1. 서 론
 2. 실험 방법
  2.1 열역학 계산
  2.2 증착 공정
 3. 결과 및 고찰
  3.1 TaCl5-C3H6-H2 계와 TaCl5-CH4-H2 계에서 상평형도
  3.2 수소의 영향
  3.3 TaC의 증착
 4. 결 론
 Acknowlegement
 References
저자
  • 김현미(한국세라믹기술원 이천분원, 한양대학교 신소재공학부) | Hyun-Mi Kim
  • 최균(한국세라믹기술원 이천분원) | Kyoon Choi Corresponding author
  • 심광보(한양대학교 신소재공학부) | Kwang-Bo Shim
  • 조남춘(국방과학연구소 제4기술연구본부) | Nam-Choon Cho
  • 박종규(국방과학연구소 제4기술연구본부) | Jong-Kyoo Park