An effective cleaning method for Ni removal in Ni-induced lateral crystallization(Ni-MILC) poly-Si TFTs and their electrical properties are investigated. The HCN cleaning method is effective for removal of Ni on the crystallized Si surface, while the nitric acid treatment results decrease by almost two orders of magnitude in the Ni concentration due to effective removal of diffused Ni mainly in the poly-Si grain boundary regions. Using the HCN cleaning method after the nitric acid treatment, re-adsorbed Ni on the Si surfaces is effectively removed by the formation of Ni-cyanide complexions. After the cleaning process, important electrical properties are improved, e.g., the leakage current density from 9.43 × 10−12 to 3.43 × 10−12 A and the subthreshold swing values from 1.37 to 0.67 mV/dec.

Abstract
 1. Introduction
 2. Experiments
 3. Results and Discussion
 4. Conclusion
 References

• Kwang-Jin Lee(Department of Materials Science & Engineering, Hanyang University)
• Doyeon Kim(Department of Energy Engineering, Dankook University)
• Duck-Kyun Choi(Department of Materials Science & Engineering, Hanyang University) Corresponding author
• Woo-Byoung Kim(Department of Energy Engineering, Dankook University) Corresponding author