Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[Mo(CO)6] as precursor and ozone(O3) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the Mo6+ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from 576 oC to 620 oC at 250 g/Nm after post-deposition annealing at 350 oC in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

Abstracts
 1. 서 론
 2. 실험 방법
 3. 결과 및 고찰
  3.1 ALD-MoOx 박막 물성 및 패시베이션 특성
  3.2 HIT cell
 4. 결 론
 References

• 정민지(충남대학교 에너지과학기술대학원) | Min Ji Jeong (Graduate School of Energy Science and Technology, Chungnam National University)
• 조영준(충남대학교 에너지과학기술대학원) | Young Joon Jo (Graduate School of Energy Science and Technology, Chungnam National University)
• 이선화(성균관대학교) | Sun Hwa Lee (College of Infomation and Communication Engineering, Sungkyunkwan University)
• 이준신(성균관대학교) | Joon Shin Lee (College of Infomation and Communication Engineering, Sungkyunkwan University)
• 임경진(주성엔지니어링) | Kyung Jin Im (Solar R&D division, JUSUNG Engineering Co. Ltd.)
• 서정호(주성엔지니어링) | Jeong Ho Seo (Solar R&D division, JUSUNG Engineering Co. Ltd.)
• 장효식(충남대학교 에너지과학기술대학원) | Hyo Sik Chang (Graduate School of Energy Science and Technology, Chungnam National University) Corresponding author