To realize large-format compact array detectors covering a wide far-infrared wavelength range up to 200 μm, we have been developing Blocked-Impurity-Band (BIB) type Ge detectors with the room- temperature surface-activated wafer bonding technology provided by Mitsubishi Heavy Industries. We fabricated various types of p+-i junction devices which possessed a BIB-type structure, and evaluated their spectral response curves using a Fourier transform spectrometer. From the Hall effect measurement, we also obtained the physical characteristics of the p+ layers which constituted the p+-i junction devices. The overall result of our measurement shows that the p+-i junction devices have a promising applicability as a new far-infrared detector to cover a wavelength range of 100-200 μm.

ABSTRACT
1. INTRODUCTION
2. MEASUREMENTS
3. RESULTS & DISCUSSIONS
4. SUMMARY
REFERENCES

• Misaki Hanaoka(Graduate School of Science, Nagoya University)
• Hidehiro Kaneda(Graduate School of Science, Nagoya University)
• Shinki Oyabu(Graduate School of Science, Nagoya University)
• Yasuki Hattori(Graduate School of Science, Nagoya University)
• Kotomi Tanaka(Graduate School of Science, Nagoya University)
• Sota Ukai(Graduate School of Science, Nagoya University)
• Kazuyuki Shichi(Graduate School of Science, Nagoya University)
• Takehiko Wada(Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency)
• Toyoaki Suzuki(SRON Netherlands Institute for Space Research, the Netherlands)
• Kentaroh Watanabe(Research Center for Advanced Science and Technology, University of Tokyo)
• Koichi Nagase(Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency/The Graduate University for Advanced Studies SOKENDAI)
• Shunsuke Baba(Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency/Research Center for Advanced Science and Technology, University of Tokyo)
• Chihiro Kochi(Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency/Research Center for Advanced Science and Technology, University of Tokyo)