In this paper, nitrogen-doped reduced graphene oxide(rGO) is obtained by thermal annealing of nitrogen-containing compounds and graphene oxide (GO) manufactured by modified Hummers' method. We use melamine as a nitrogen-containing compound and treat GO thermally with melamine at over 800 ~ 1,000℃ and 1 ~ 3 hr under Ar atmosphere. The electrical conductivity of doped rGO is measured by 4-point probe method. As a result, nitrogen contents on rGO are found to be in the range of 2.5 to 12.5 at% depending on the doping conditions after thermal annealing. The main doping site on graphene oxide is changed from pyridinic-N and pyrrolinic N to the graphitic site as the heat treatment temperature increases. The electrical conductivity of doped rGO increases as the N doping content increases. As the thermal treatment time increases, the change of both total doping contents and doping sites is slight and the surface resistance is remarkably reduced, which is caused by healing effects of doped graphene oxide at high temperature.

Abstract
1. 서 론
2. 실 험
    2.1 실험재료
    2.2 멜라민을 이용한 질소도핑된 환원그래핀 제조
    2.3 감압여과법을 이용한 면저항 측정 시료 제작 및 측정
3. 결과 및 고찰
4. 결 론
References

• 김수민(전남대학교 일반대학원 신화학소재공학과) | Sumin Kim (Department of Advanced Chemicals & Engineering, Graduate School Chonnam National University)
• 김현(전남대학교 일반대학원 신화학소재공학과) | Hyun Kim (Department of Advanced Chemicals & Engineering, Graduate School Chonnam National University)
• 김소양(전남대학교 일반대학원 신화학소재공학과) | So Yang Kim (Department of Advanced Chemicals & Engineering, Graduate School Chonnam National University)
• 한종훈(전남대학교 공과대학 화학공학부 및 광전자융합연구소) | Jong Hun Han (School of Chemical Engineering, Chonnam National University) Corresponding author