Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). Mo(CO)6 and H2 plasma are used as precursor. H2 plasma is induced between ALD cycles for reduction of Mo(CO)6 and Mo film is deposited on Si substrate at 300℃. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is 176 μΩ·cm at Mo(CO)6 pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

Abstract
1. 서 론
2. 실험 방법
3. 결과 및 고찰
    3.1 Mo 금속 박막의 두께
    3.2 Mo 금속의 전기적 특성
4. 결 론
References

• 임태완(충남대학교 에너지기술과학 대학원) | Taewaen Lim (Graduate School of Energy Science and Technology, Chungnam National University)
• 장효식(충남대학교 에너지기술과학 대학원) | Hyo Sik Chang (Graduate School of Energy Science and Technology, Chungnam National University) Corresponding author