In this study, we have investigated a selective emitter using a UV laser on BBr3 diffusion doping layer. The selective emitter has two regions of high and low doping concentration alternatively and this structure can remove the disadvantages of homogeneous emitter doping. The selective emitters were fabricated by using UV laser of 355 nm on the homogeneous emitters which were formed on n-type Si by BBr3 diffusion in the furnace and the heavy boron doping regions were formed on the laser regions. In the optimized laser doping process, we are able to achieve a highly concentrated emitter with a surface resistance of up to 43 Ω/□ from 105 ± 6 Ω/□ borosilicate glass (BSG) layer on Si. In order to compare the characteristics and confirm the passivation effect, the annealing is performed after Al2O3 deposition using an ALD. After the annealing, the selective emitter shows a better effect than the high concentration doped emitter and a level equivalent to that of the low concentration doped emitter.

1. 서 론
2. 실험방법
3. 결과 및 고찰
    3.1. BBr3 도핑과 레이저 공정 조건
    3.2. 패시베이션 효과 확인 및 도핑 프로파일
4. 결 론
References

• 김가민(충남대학교 에너지과학기술대학원) | Ga Min Kim (Graduate School of Energy Science and Technology, Chungnam National University, Daejeon 34134, Republic of Korea)
• 장효식(충남대학교 에너지과학기술대학원) | Hyo Sik Chang (Graduate School of Energy Science and Technology, Chungnam National University, Daejeon 34134, Republic of Korea) Corresponding author