In this work, we developed silver nanowires and a silicon based Schottky junction and demonstrated ultrafast broadband photosensing behavior. The current device had a response speed that was ultrafast, with a rising time of 36 μs and a falling time of 382 μs, and it had a high level of repeatability across a broad spectrum of wavelengths (λ = 365 to 940 nm). Furthermore, it exhibited excellent responsivity of 60 mA/W and a significant detectivity of 3.5 × 1012 Jones at a λ = 940 nm with an intensity of 0.2 mW cm2 under zero bias operating voltage, which reflects a boost of 50%, by using the AC PV effect. This excellent broadband performance was caused by the photon-induced alternative photocurrent effect, which changed the way the optoelectronics work. This innovative approach will open a second door to the potential design of a broadband ultrafast device for use in cutting-edge optoelectronics.

Abstract
1. Introduction
2. Experimental
    2.1. Device preparation
    2.2. Electrical characterization and photoresponse.
3. Results and Discussion
4. Conclusion
Acknowledgements
References

• Jaeseong Lim(Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea)
• Mohit Kumar(Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea)
• Hyungtak Seo(Department of Energy Systems Research, Ajou University,Department of Materials Science and Engineering, Ajou University)