The semiconductor industry faces physical limitations due to its top-down manufacturing processes. High cost of EUV equipment, time loss during tens or hundreds of photolithography steps, overlay, etch process errors, and contamination issues owing to photolithography still exist and may become more serious with the miniaturization of semiconductor devices. Therefore, a bottom-up approach is required to overcome these issues. The key technology that enables bottom-up semiconductor manufacturing is area-selective atomic layer deposition (ASALD). Here, various ASALD processes for elemental metals, such as Co, Cu, Ir, Ni, Pt, and Ru, are reviewed. Surface treatments using chemical species, such as self-assembled monolayers and small-molecule inhibitors, to control the hydrophilicity of the surface have been introduced. Finally, we discuss the future applications of metal ASALD processes.

Abstract
1. 서 론
2. 표면 활성화를 통한 ASALD
    2.1. 기판의 선택성에 따른 핵 생성
    2.2. 기존 방법의 한계 및 해결 방법
    2.3. 표면 활성화를 통한 금속의 ASALD
3. 표면 비활성화를 통한 ASALD
    3.1. 자가 정렬 단분자층
    3.2. 저분자 억제제
    3.3. 표면 비활성화를 통한 금속의 ASALD
4. ASALD 응용 분야
5. 결론 및 전망
References

• 조민규(서울과학기술대학교 신소재공학과) | Min Gyoo Cho (Department of Material Science and Engineering, Seoul National University of Science and Technology)
• 고재희(서울과학기술대학교 신소재공학과) | Jae Hee Go (Department of Material Science and Engineering, Seoul National University of Science and Technology)
• 최병준(서울과학기술대학교 신소재공학과) | Byung Joon Choi (Department of Material Science and Engineering, Seoul National University of Science and Technology) Corresponding Author