In this study, we introduce a novel TiN/Ag embedded TiO2/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (Vo). The current-voltage (I-V ) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.

1. Introduction
2. Experimental Procedure
    2.1. Device preparation
    2.2. Resistive switching test
3. Results and Discussion
    3.1. Physical and chemical characteristics
    3.2. Resistive switching characteristics
    3.3. Resistive switching mechanism
4. Conclusion
Acknowledgement
Declaration of Competing Interest
References
Author Information

• Won Jin Kim(Department of Foundry Engineering, Dankook University, Youngin 16890, Republic of Korea)
• Jinho Lee(Department of Energy Engineering, Dankook University, Cheonan 31116, Republic of Korea)
• Ryun Na Kim(Department of Energy Engineering, Dankook University, Cheonan 31116, Republic of Korea)
• Donghee Lee(Department of Energy Engineering, Dankook University, Cheonan 31116, Republic of Korea)
• Woo-Byoung Kim(Department of Foundry Engineering, Dankook University, Youngin 16890, Republic of Korea, Department of Energy Engineering, Dankook University, Cheonan 31116, Republic of Korea) Corresponding author