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Effect of (Al, Nb) Co-Doping on the Complex Dielectric Properties and Electric Modulus of BaTiO3-Based Ceramics KCI 등재 SCOPUS

Ziheng Huang, Ruifeng Niu, Depeng Wang, Weitian Wang
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  • URLhttps://db.koreascholar.com/Article/Detail/435852
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한국재료학회지 (Korean Journal of Materials Research)
한국재료학회 (Materials Research Society Of Korea)
초록

In this work, a series of BaTiO3-based ceramic materials, Ba(Al0.5Nb0.5)xTi1-xO3 (x = 0, 0.04, 0.06, 0.08), were synthesized using a standard solid-state reaction technique. X-ray diffraction profiles indicated that the Al+Nb co-doping into BaTiO3 does not change the crystal structure significantly with a doping concentration up to 8 %. The doping ions exist in Al3+ and Nb5+ chemical states, as revealed by X-ray photoelectron spectroscopy. The frequencydependent complex dielectric properties and electric modulus were studied in the temperature range of 100~380 K. A colossal dielectric permittivity (>1.5 × 104) and low dielectric loss (<0.01) were demonstrated at the optimal dopant concentration x = 0.04. The observed dielectric behavior of Ba(Al0.5Nb0.5)xTi1-xO3 ceramics can be attributed to the Universal Dielectric Response. The complex electric modulus spectra indicated the grains exhibited a significant decrease in capacitance and permittivity with increasing co-doping concentration. Our results provide insight into the roles of donor and acceptor co-doping on the properties of BaTiO3-based ceramics, which is important for dielectric and energy storage applications.

키워드
ceramicscolossal permittivitydielectric propertiescomplex modulus analysis.
목차
1. Introduction
2. Experimental Procedure
3. Results and Discussion
4. Conclusion
References
Author Information
저자
  • Ziheng Huang(School of Physics and Electronic Information, Yantai University, Yantai 264005, P.R. China)
  • Ruifeng Niu(School of Physics and Electronic Information, Yantai University, Yantai 264005, P.R. China)
  • Depeng Wang(School of Physics and Electronic Information, Yantai University, Yantai 264005, P.R. China)
  • Weitian Wang(School of Physics and Electronic Information, Yantai University, Yantai 264005, P.R. China) Corresponding author