Pure SnO2 has proven very difficult to densify. This poor densification can be useful for the fabrication of SnO2 with a porous microstructure, which is used in electronic devices such as gas sensors. Most electronic devices based on SnO2 have a porous microstructure, with a porosity of > 40%. In pure SnO2, a high sintering temperature of approximately 1300°C is required to obtain > 40% porosity. In an attempt to reduce the required sintering temperature, the present study investigated the low-temperature sinterability of a current system. With the addition of TiO2, the compositions of the samples were Sn1-xTixO2-CoO(0.3wt%)-CuO(2wt%) in the range of x ≤ 0.04. Compared to the samples without added TiO2, densification was shown to be improved when the samples were sintered at 950°C. The dominant mass transport mechanism appears to be grain-boundary diffusion during heat treatment at 950°C.

1. Introduction
2. Experimental Procedure
3. Results and Discussion
    3.1. The solution effect of TiO2 in SnO2-CoO(0.3wt%)-CuO(1wt%) samples
    3.2. Densification
    3.3. Microstructure
    3.4. Dielectric constant
4. Conclusions
Acknowledgments
References

• Jae-Sang Lee(School of Advanced Materials and Electrical Engineering, Andong National University, Andong Kyungbuk 36729, Republic of Korea)
• Kyung-Sik Oh(School of Advanced Materials and Electrical Engineering, Andong National University, Andong Kyungbuk 36729, Republic of Korea)
• Yeong-Kyeun Paek(School of Advanced Materials and Electrical Engineering, Andong National University, Andong Kyungbuk 36729, Republic of Korea) Corresponding author