논문 상세보기
pp.448-455
We conducted a study on excessive doping of the Cr and In elements in Bi-Sb-Te materials satisfying the Hume- Rothery rule, and investigated the resulting electrical and thermal properties. From X-ray diffraction (XRD) results, we confirmed the formation of a single phase even with excessive doping. Through analysis of electrical properties, we observed the highest enhancement in electrical characteristics at y = 0.2, suggesting that the appropriate ratio of Bi-Sb significantly influences this enhancement. Using the Callaway-von Baeyer (CvB) model to assess scattering due to point defects, we calculated the experimental point defect scattering factor (ΓCvB.exp), which was notably high due to the substantial differences in volume and atomic weight between the substituted (Cr, In) and original (Bi, Sb) elements. Additionally, we conducted a single parabolic band (SPB) modeling analysis of materials with compositions y = 0.1 and 0.2, where, despite a decrease in densityof- states effective mass (md *) during the enhancement process from y = 0.1 to 0.2, a sharp increase in non-degenerate mobility (μ0) led to an 88 % increase in weighted mobility (μw). Furthermore, analyzing zT with respect to nH revealed a 51 % increase in zT at a composition of y = 0.2. This study confirmed a significant reduction in lattice thermal conductivity with the co-doping strategy, and with further compositional studies to improve electrical properties, we anticipate achieving high zT.
1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
Acknowledgement
References
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