논문 상세보기

Modeling and Identification the Parameters of a Silicon-Based Solar Cell to Optimize Its Energy Recovery KCI 등재 SCOPUS

  • 언어ENG
  • URLhttps://db.koreascholar.com/Article/Detail/440807
구독 기관 인증 시 무료 이용이 가능합니다. 4,000원
한국재료학회지 (Korean Journal of Materials Research)
한국재료학회 (Materials Research Society Of Korea)
초록

Genetic algorithms (GAs) are used to optimize solutions to problems, particularly those that are analytically impossible to solve. As their name suggests, they are inspired by the biological concepts of genetics and evolution. Our work aims to study and model a silicon-based photovoltaic generator (PVG). Among the various models available is that of the diode. Modeling was used to approximate the PVG output (voltage, current) as a function of two inputs: temperature and irradiation. The parameters of our model were identified using a real coding algorithm, with the cumulative square error was used for selection. To test the effectiveness of our model, we carried out simulation tests on the power-voltage (P-V) and current-voltage (I-V) characteristics of a wide range of irradiation and temperature variations. This study demonstrates the effectiveness and accuracy of the proposed approach (GAs) and validates the parameters obtained and used in the single-diode electrical model. The results indicate that the GA technique is a better conventional parameter extraction strategy in terms of convergence. It provides globally optimal solutions.

목차
Abstract
1. Introduction
2. Experimental Procedure
    2.1. The Mathematical model of a PVG
3. Results and Discussion
    3.1. Identification of electrical parameters using GA
    3.2. Simulation of the PVG
4. Conclusion
Acknowledgement
References
Author Information
저자
  • Nacera Mazouz(Laboratory of Power Systems and Solar Energy and Automatic, Department of Electronics, Faculty of Electrical Engineering, University of Sciences and Technologies of Oran Mohamed-Boudiaf, Oran 31000, Algeria) Corresponding author
  • Moadh Kichene(Department of Electronics, Faculty of Technology, University Mohamed Boudiaf of M’sila, M’sila 28000, Algeria)