Area-selective atomic layer deposition (AS-ALD) is a bottom-up process that selectively deposits thin films onto specific areas of a wafer surface. The surface reactions of AS-ALD are controlled by blocking the adsorption of precursors using inhibitors such as self-assembled monolayers (SAMs) or small molecule inhibitors. To increase selectivity during the AS-ALD process, the design of both the inhibitor and the precursor is crucial. Both inhibitors and precursors vary in reactivity and size, and surface reactions are blocked through interactions between precursor molecules and surface functional groups. However, challenges in the conventional SAM-based AS-ALD method include thermal instability and potential damage to substrates during the removal of residual SAMs after the process. To address these issues, recent studies have proposed alternative inhibitors and process design strategies.

1. Introduction
2. Surface deactivation using SAM
    2-1. Condition of head group
    2-2. Condition of tail group
    2-3. Condition of functional group
    2-4. Condition of ALD precursor in AS-ALD
3. Issues and Improvements in theImplementation of SAM
    3-1. Thermal Instability of SAM
    3-2. Residual SAM removal issues
4. Conclusion
Funding
Conflict of Interest
Data Availability Statement
Author Information and Contribution
Acknowledgments
References

• Si Eun Jung(Seoul National University of Science and Technology, Seoul 01811, Republic of Korea)
• Ji Woong Shin(Seoul National University of Science and Technology, Seoul 01811, Republic of Korea)
• Ye Jin Han(Seoul National University of Science and Technology, Seoul 01811, Republic of Korea)
• Byung Joon Choi(Seoul National University of Science and Technology, Seoul 01811, Republic of Korea) Corresponding author