TiO2/Ag/TiO2 (TAT) tri-layer films were deposited using radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering on a glass substrate, and then rapid thermal annealed at 150 and 300 °C for 10 minutes. The influence of annealing temperature on the optical and electrical properties of the films was investigated. As annealing temperature was rapidly increased from room temperature to 300 °C, the grain size of the TiO2 (004), (204) and Ag (200) increased from 36.8, 14.3, 22.1 nm to 43.2, 16.6, 23.4 nm, respectively and the electrical resistivity decreased from 4.64 × 10-5 Ω cm to 2.79 × 10-5 Ω cm. Also, the average visible transmittance increased from 82.7 % to 84.9 %. In addition, the electromagnetic interference shielding effectiveness of TAT films was also increased to 31.7 db after annealing at 300 °C. These results demonstrate that post-deposition rapid thermal annealing is an effective method for enhancing the electrical and optical properties of TAT films.

Abstract
1. 서 론
2. 실험방법
3. 결과 및 고찰
4. 결 론
Acknowledgement
References
<저자소개>

• 김대일(울산대학교 첨단소재공학부) | Daeil Kim (School of Materials Science and Engineering, University of Ulsan, Ulsan 44776, Republic of Korea)
• 김지호(울산대학교 첨단소재공학부) | Jiho Kim (School of Materials Science and Engineering, University of Ulsan, Ulsan 44776, Republic of Korea)
• 박병근(울산대학교 첨단소재공학부) | Byeong-Geun Park (School of Materials Science and Engineering, University of Ulsan, Ulsan 44776, Republic of Korea)
• 이헌조(울산대학교 첨단소재공학부) | Heon-Jo Lee (School of Materials Science and Engineering, University of Ulsan, Ulsan 44776, Republic of Korea)
• 공영민(울산대학교 첨단소재공학부) | Young-Min Kong (School of Materials Science and Engineering, University of Ulsan, Ulsan 44776, Republic of Korea) Corresponding author