Doping diamond exhibits excellent photoelectric properties, making it promising for applications in wide-bandgap semiconductors, high-temperature devices, and high-power electronics. However, research on n-type doping remains limited. This paper reviews the main n-type doping methods for diamond: ion implantation (I/I), chemical vapor deposition (CVD), high pressure–high temperature (HPHT), deuterated method (DM), surface charge transfer doping (SCTD), and laser irradiation (LI). It analyzes the parameters, advantages, and disadvantages of each technique while classifying common single-element and multi-element co-doping methods. Single-element dopants include Group IA (Li, Na, K), Group ⅡA (Be, Mg), Group VA (N, P, As, Sb), and Group ⅥA (O, S, Se, Te) elements. Multi-element co-doping often combines B-P, B-S, B-O, and B-N pairs. Additionally, we examine the atomic structures of these dopants, introduce commonly used simulation models, and compare the electronic characteristics of synthesized n-type doping diamonds. Finally, we summarize the challenges of n-type doping diamond in doping equipment, processes, and electronic devices, and propose possible improvements and future development directions.

Review of n-type doping diamond: methods, elements, and properties
    Abstract
    1 Introduction
    2 Synthesis of n-type doping  diamond
        2.1 Doping methods of n-type doping diamond
        2.2 Doping elements of n-type doping diamond
        2.3 Electronic properties of n-type doping  diamond
    3 Challenges and prospects
        3.1 Synthesis equipment of n-type doping  diamond
        3.2 Doping process of n-type doping  diamond
        3.3 Electronic devices of n-type doping  diamond
    4 Conclusion
    Acknowledgements 
    References

• Mingke Li(The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China)
• Xin Liu(The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China)
• Dayang Yu(School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China)
• Shengnan Shen(School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China, Wuhan University Shenzhen Research Institute, Shenzhen 518057, China, Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University, Wuhan 430072, China, Hubei Provincial Engineering Research Center of Integrated Circuit Packaging and Integrated Generic Technologies, Wuhan University, Wuhan 430072, China)