논문 상세보기
pp.119-129
As dynamic random-access memory (DRAM) devices continue to scale, reducing the equivalent oxide thickness (EOT) of capacitors and achieving precise control of the dielectric-electrode interface have become critical challenges. TiO2 has emerged as a promising high-k dielectric material due to its crystalline phases, anatase (dielectric constant of 30-75) and rutile (dielectric constant of 90-170). However, its application is limited by high leakage current that arises from the low conduction band offset with conventional electrodes. In particular, the low-temperature formation of rutile TiO2 is strongly influenced by lattice mismatch with the bottom electrode. Interface engineering strategies, such as the introduction of RuO2 layers on Ru electrodes, have been proposed to mitigate this issue. In this work, TiN, a bottom electrode widely adopted in mass-production processes, was employed to enhance the electrical performance of TiO2-based capacitors through systematic interface control. The effects of different TiN deposition methods on substrate properties were investigated, and argon plasma treatment was introduced to tailor the dielectric-electrode interface and promote rutile TiO2 formation. Both the TiN bottom electrode and the TiO2 dielectric layer were deposited using plasma-enhanced atomic layer deposition to ensure high film quality. As a result, the leakage current density was suppressed to approximately 10-5 A/cm2 at 0.8 V, while the EOT was reduced to 1.32 nm. These results indicate that the crystallization behavior of TiO2 thin films strongly depends on dielectric thickness and substrate crystallinity. The findings provide important guidelines for developing TiO2-based high-k dielectric thin films for advanced capacitor applications.
1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
Acknowledgement
References
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