The electronic and phonon transport properties of MoS2 were tailored by fabricating MoS2/MWCNT nanocomposites via a hydrothermal route. Incorporation of MWCNT resulted in a 58% enhancement in electrical conductivity, reaching 327 Sm− 1 at 503 K, attributed to strong π-π interactions, reduced hopping energy of 0.228 eV and Fermi level shift toward the valence band. The MWCNT also acted as effective phonon scattering centres, reducing the thermal conductivity to 0.499 Wm− 1K− 1 at 453 K. HRTEM analysis revealed defects such as grain boundaries, dislocations and interfaces between 1D-MWCNT and 2D-MoS2, which further promoted phonon scattering. Raman spectroscopy confirmed a reduction in Debye temperature and average sound velocity, indicating lattice softening. Overall, the incorporation of MWCNT in MoS2 not only facilitates carrier transport by serving as conductive bridges between MoS2 layers but also enhances phonon scattering, thereby optimizing thermoelectric performance.

Interface and dimensionality driven engineering of carrier transport and phonon dynamics in MoS2/MWCNT nanocomposites
    Abstract
    1 Introduction
    2 Experimental procedure
    3 Characterisation techniques
    4 Results and discussion
    5 Conclusion
    References

• Simon Sajan John(Nanotechnology Research Centre (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur 603203, India, Center of Excellence in Materials for Advanced Technologies (CeMAT), Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603203, India)
• Mohamed Jibri Khaja Peer(Nanotechnology Research Centre (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur 603203, India, Center of Excellence in Materials for Advanced Technologies (CeMAT), Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603203, India)
• M. Navaneethan(Nanotechnology Research Centre (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur 603203, India, Center of Excellence in Materials for Advanced Technologies (CeMAT), Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603203, India) Corresponding author
• Archana Jayaram(Center of Excellence in Materials for Advanced Technologies (CeMAT), Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603203, India)
• Abinaya Rengarajan(Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, Mickiewicza Ave. 30, Krakow 30-059, Poland)