Since the first mechanical exfoliation of graphene in 2004, two-dimensional materials have been extensively studied due to their distinctive electrical and optical properties combined with atomic-scale thickness. Black phosphorus has emerged as a promising two-dimensional material because of its thickness-dependent bandgap, relatively high carrier mobility, and intrinsic in-plane anisotropy. It was first synthesized in 1914 using high-pressure techniques involving several gigapascals. A mineralizer-assisted synthesis method was introduced in 2007, enabling growth under ambient pressure without the use of highly toxic reagents. Despite these advances, black phosphorus obtained by conventional methods is typically in bulk form and the growth mechanism in the ampoule remains unclear. In this study, the growth location and behavior of black phosphorus are investigated using a quartz ampoule-based mineralizer-assisted synthesis method. The growth location and morphology of black phosphorus are dependent on the experimental configuration, particularly the presence of mineralizer-related compounds and metal-coated substrates. We demonstrate that Sn-P-I compounds and metal-induced reactions can effectively control the growth location, and provide insights toward thin-film black phosphorus synthesis.

Abstract
1. 서 론
2. 실험 방법
    2.1. 미네랄라이저 보조 합성법을 이용한 흑린 합성
    2.2. Sn-P-I 화합물을 이용한 흑린 합성
    2.3. 합성된 흑린의 특성 분석
3. 결과 및 고찰
4. 결 론
Acknowledgement
References
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• 조유연(선문대학교 반도체소재공학과) | Yooyeon Jo (Department of Semiconductor Materials Engineering, Sun Moon University, Asan 31460, Republic of Korea) Corresponding author