Lead halide perovskite semiconductors have attracted significant attention because of their defect tolerance, tunable bandgap, and excellent optoelectronic properties. In this work, symmetric and asymmetric multiple quantum wells (MQWs) based on CsPbBr3 were fabricated using a thermal evaporation process, and their photoluminescence (PL) properties were systematically investigated. TPBi (2,2′,2″-(1,3,5-benzenetriyl)-tris(1-phenyl-1H-benzimidazole)) and BCP (bathocuproine) were employed as barrier materials to form Type I and Type II band alignments, respectively, resulting in distinct optical characteristics and carrier recombination behaviors in the MQW structures. Despite using the same CsPbBr3 material, the MQWs exhibited significantly different PL characteristics depending on the band alignment and structural configuration. In particular, asymmetric MQWs with Type I and Type II band alignments exhibited completely different carrier dynamics in temperature-dependent PL measurements. The Type I structures exhibited thermally activated carrier redistribution, whereas the Type II structures showed dominant energy funneling toward the lowest energy states. These results demonstrate that carrier dynamics and optical properties in perovskite MQWs can be effectively controlled by band alignment and structural asymmetry, providing a direct physical basis for designing quantum well-based optoelectronic devices.

Abstract
1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
Acknowledgement
References
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• 이광재(순천향대학교 탄소중립학과) | Kwang Jae Lee (Department of Carbon Neutrality, Soonchunhyang University, Asan 31538, Republic of Korea) Corresponding author