Nanoporous semiconductor structures provide a large interfacial area and tunable surface properties, enabling effective control of material/interface interactions. In this study, nanoporous GaN (NP GaN) was employed as an electron transport layer (ETL) to incorporate CsPbBr3, and the resulting interfacial and optical characteristics were systematically investigated. NP GaN with a controlled pore fraction (ρpore = 3.7~36.8 %) was fabricated via electrochemical (EC) etching. Cross-sectional SEM analysis revealed that the pore morphology evolves significantly with etching time, forming vertically aligned porous networks with increased pore density, connectivity, and diameter, which enables efficient infiltration of the CsPbBr3 precursor into the NP framework. Consequently, CsPbBr3 on NP GaN exhibits higher photoluminescence (PL) intensity, reduced full width at half maximum (FWHM), and improved internal quantum efficiency (IQE) from 4.9 % to 15.6 %. Temperature-dependent PL (TDPL) analysis revealed suppressed thermal quenching, accompanied by increased activation energy and reduced non-radiative recombination. These results demonstrate that NP GaN effectively modulates interfacial structure and carrier recombination behavior, providing a viable strategy for enhancing the optical performance of perovskite materials.

Abstract
1. 서 론
2. 실험 방법
    2.1. GaN 박막 성장
    2.2. CsPbBr3 전구체 용액 제조
    2.3. 전기화학적 식각(EC Etching)
    2.4. CsPbBr3 스핀코팅 및 열처리
    2.5. 광학 특성 분석
3. 결과 및 고찰
4. 결 론
Acknowledgement
References
<저자소개>

• 이광재(순천향대학교 탄소중립학과) | Kwang Jae Lee (Department of Carbon Neutrality, Soonchunhyang University, Asan 31538, Republic of Korea) Corresponding author