Sn-doped In2O3 (ITO) thin films were deposited on bare glass and on glass with a SiO2 buffer layer using radio frequency magnetron sputtering at room temperature, and the structural, electrical, and optical properties of the films were considered according to changes in the thickness of the upper ITO film and the lower SiO2 buffer layer. While the 100 nm-thick ITO monolayer film showed a visible transmittance of 80.52 % and an electrical resistivity of 2.0 × 10-3 Ωcm, the ITO 70 nm/SiO2 30 nm double layered film showed an increased visible transmittance of 83.38 % and a decreased electrical resistivity of 1.3 × 10-3 Ωcm. Also, since the surface roughness of the ITO 70 nm/SiO2 30 nm films (1.66 nm) was lower than that of the ITO films (2.31 nm), it was concluded that having an effective thickness of SiO2 buffer layer can improve the flatness of the ITO/SiO2 thin film. In addition, the work function of the ITO/SiO2 film is influenced by the SiO2 buffer layer, and it has been shown that the work function of the ITO/SiO2 film (4.63 eV) is higher than that of ITO single layer film. Comparing optical transparency and electrical resistivity in this study, the ITO 70 nm/SiO2 30 nm films showed a relatively better electro-optical performance index (figure of merit) than the ITO 100 nm monolayer thin film.

Abstract
1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
AcknowledgementThis
References
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• 김대일(울산대학교 첨단소재공학부) | Daeil Kim (School of Materials Science and Engineering, University of Ulsan, Ulsan 44776, Republic of Korea) Corresponding author
• 이지민(울산대학교 첨단소재공학부) | Ji Min Lee (School of Materials Science and Engineering, University of Ulsan, Ulsan 44776, Republic of Korea)