Thickness-Dependent Photoelectrochemical Performance of BiVO4 Photoanodes Fabricated by Radio Frequnecy Sputtering
Bismuth vanadate (BiVO4) has been widely investigated as a photoanode material for photoelectrochemical (PEC) water splitting because it has a suitable bandgap and strong visible-light absorption. However, its performance is highly dependent on film thickness, as there is a trade-off between light absorption and charge transport. In this study, BiVO4 thin films with thicknesses of 200, 300, and 400 nm were deposited on FTO substrates via RF magnetron sputtering to systematically investigate the thickness-dependent PEC performance. X-ray diffraction and field-emission scanning electron microscopy confirmed the formation of uniform and crystalline BiVO4 thin films. UV–vis spectroscopy revealed that light absorption increased with film thickness. PEC measurements showed that the 300 nm BiVO4 photoanode delivered the highest photocurrent density of 1.91 mA cm-2 at 1.23 V vs. RHE, along with a maximum HC-STH efficiency of 0.309 %. Electrochemical impedance spectroscopy indicated that the 300 nm film exhibited the lowest charge transfer resistance, suggesting reduced charge recombination. Furthermore, the optimized photoanode maintained stable photocurrent for over 5 hours. These results highlight that precise thickness control via RF magnetron sputtering is critical for optimizing the PEC performance of BiVO4 photoanodes.