한국재료학회지 제32권 제5호 (p.243-248)

Influence of Annealing Temperature on Crystal Orientation of Electrodeposited Sb2Se3 Thin-Film Photovoltaic Absorbers

키워드 :
antimony selenide,V-VI compound semiconductor,thin-film solar cell,electrodeposition.

목차

Abstract
1. Introduction
2. Experimental Procedure
   2.1. Thin-film preparation
   2.2. Solar cell fabrication
   2.3. Characterization
3. Results and Discussions
   3.1. Electrochemical behavior
   3.2. Structural characterization
   3.3. Current density-voltage (J-V) analysis
4. Conclusions
Acknowledgements
References

초록

This study demonstrates a different approach method to fabricate antimony selenide (Sb2Se3) thin-films for the solar cell applications. As-deposited Sb2Se3 thin-films are fabricated via electrodeposition route and, subsequently, annealed in the temperature range of 230 ~ 310oC. Cyclic voltammetry is performed to investigate the electrochemical behavior of the Sb and Se ions. The deposition potential of the Sb2Se3 thin films is determined to be -0.6 V vs. Ag/AgCl (in 1 M KCl), where the stoichiometric composition of Sb2Se3 appeared. It is found that the crystal orientations of Sb2Se3 thin-films are largely dependent on the annealing temperature. At an annealing temperature of 250 oC, the Sb2Se3 thin-film grew most along the c-axis [(211) and/or (221)] direction, which resulted in the smooth movement of carriers, thereby increasing the carrier collection probability. Therefore, the solar cell using Sb2Se3 thin-film annealed at 250 oC exhibited significant enhancement in JSC of 10.03 mA/cm2 and a highest conversion efficiency of 0.821 % because of the preferred orientation of the Sb2Se3 thin film.