한국재료학회지 제32권 제9호 (p.384-390)

열처리에 따른 Peroxo Titanium Complex 졸 용액 기반 TiN/TiO2/ FTO Resistive Random-Access Memory의 전기적 특성

Electrical Properties of TiN/TiO2/FTO Resistive Random-Access Memory Based on Peroxo Titanium Complex Sol Solution by Heat Treatment
키워드 :
peroxo titanium complex,resistive random-access memory,oxygen vacancy,conductive filament,oxide RAM.

목차

Abstract
1. Introduction
2. Experimental Procedure
   2.1. Device preparation
   2.2. Characterization
   2.3. Resistive switching test
3. Result and Discussion
   3.1. Crystallinity and insulating layer properties
   3.2. Current-voltage (I-V) characteristics of TiN/TiO2/FTO
4. Conclusion
Acknowledgement
References

초록

A spin coating process for RRAM, which is a TiN/TiO2/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (VO), a major factor of the conductive filament. It was carried out at 100 oC under moisture removal conditions and at 300 oC and 500 oC for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti3+ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 oC showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 104. The double-logarithmic plot of the I-V curve confirmed the device at 100 oC required a low operating voltage. As a result, the 100 oC heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO2/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.