Using first-principles theory, this work investigated the Cu-doping behavior on the N-vacancy of the C3N monolayer and simulated the adsorption performance of Cu-doped C3N (Cu–C3N) monolayer upon two dissolved gases ( H2 and C2H2). The calculations meant to explore novel candidate for sensing application in the field of electrical engineering evaluating the operation status of the transformers. Our results indicated that the Cu dopant could be stably anchored on the N- vacancy with the Eb of − 3.65 eV and caused a magnetic moment of 1 μB. The Cu–C3N monolayer has stronger performance upon C2H2 adsorption than H2 give the larger Ead, QT and change in electronic behavior. The frontier molecular orbital (FMO) theory indicates that Cu–C3N monolayer has the potential to be applied as a resistance-type sensor for detection of such two gases, while the work function analysis evidences its potential as a field-effect transistor sensor as well. Our work can bring beneficial information for exploration of novel sensing material to be applied in the field of electrical engineering, and provide guidance to explore novel nano-sensors in many fields.

Transition-metal-embedded carbon nanotubes (CNTs) have been accepted as a novel type of sensing material due to the combined advantage of the transition metal, which possesses good catalytic behavior for gas interaction, and CNTs, with large effective surface areas that present good adsorption ability towards gas molecules. In this work, we simulate the adsorption of O2 and O3 onto Rh-doped CNT in an effort to understand the adsorbing behavior of such a surface. Results indicate that the proposed material presents good adsorbing ability and capacities for these two gases, especially O3 molecules, as a result of the relatively large conductivity changes. The frontier molecular orbital theory reveals that the conductivity of Rh-CNT would undergo a decrease after the adsorption of two such oxidizing gases due to the lower electron activity and density of this media. Our calculations are meaningful as they can supply experimentalists with potential sensing material prospects with which to exploit chemical sensors.

Comprehensive calculations of the Rh decoration effect on zigzag CNTs with n ranging from 7 to 12 were conducted in this work to understand the effect of Rh doping on geometric structures and electronic behaviors upon metallic and semiconducting CNTs. The obtained results indicated that Rh dopant not only contributes to the deformation of C-C bonds on the sidewall of CNTs, but also transforms the electron distribution of related complexes, thereby leading to a remarkable increase of the conductivity of pure CNTs given the emerged novel state within the energy gap for metallic CNTs and the narrowed energy gap for semiconducting CNTs. Our calculations will be meaningful for exploiting novel CNT-based materials with better sensitivity to electrons and higher electrical conductivity compared with pure CNTs.

Carbon chain inserted carbon nanotubes (CNTs) have been experimentally proven having undergone pronounced property change in terms of electrical conductivity compared with pure CNTs. This paper simulates the geometry of carbon chain inserted CNTs and analyzes the mechanism for conductivity change after insertion of carbon chain. The geometric simulation of Pt doped CNT was also implemented for comparison with the inserted one. The results indicate that both modification by Pt atom on the surface of CNT and addition of carbon chain in the channel of the tube are effective methods for transforming the electrical properties of the CNT, leading to the redistribution of electron and thereby causing the conductivity change in obtained configurations. All the calculations were obtained based on density functional theory method.