SiC is a material with excellent strength, heat resistance, and corrosion resistance. It is generally used as a material for SiC invertors, semiconductor susceptors, edge rings, MOCVD susceptors, and mechanical bearings. Recently, SiC single crystals for LED are expected to be a new market application. In addition, SiC is also used as a heating element applied directly to electrical energy. Research in this study has focused on the manufacture of heating elements that can raise the temperature in a short time by irradiating SiC-I2 with microwaves with polarization difference, instead of applying electric energy directly to increase the convenience and efficiency. In this experiment, Polydimethylsilane (PDMS) with 1,2 wt% of iodine is synthesized under high temperature and pressure using an autoclave. The synthesized Polycarbosilane (PCS) is heat treated in an argon gas atmosphere after curing process. The experimental results obtain resonance peaks using FT-IR and UV-Visible, and the crystal structure is measured by XRD. Also, the heat-generating characteristics are determined in the frequency band of 2.45 GHz after heat treatment in an air atmosphere furnace.

Two dimensional(2D) crystals, composed of a single layer or a few atomic layers extracted from layered materials are attracting researchers’ interest due to promising applications in the nanoelectromechanical systems. Worldwide researchers are preparing devices with suspended 2D materials to study their physical and electrical properties. However, during the fabrication process of 2D flakes on a target substrate, contamination occurs, which makes the measurement data less reliable. We propose a dry transfer method using poly-methyl methacrylate(PMMA) for the 2D flakes to transfer onto the targeted substrate. The PMMA is then removed from the device by an N-Methyl-2-pyrrolidone solution and a critical point dryer, which makes the suspended 2D flakes residue free. Our method provides a clean, reliable and controllable way of fabricating micrometer-sized suspended 2D nanosheets.

The electronic and optical characteristics of molybdenum disulphide (MoS2) film significantly vary with its thickness, and thus a rapid and accurate estimation of the number of MoS2 layers is critical in practical applications as well as in basic researches. Various existing methods are currently available for the thickness measurement, but each has drawbacks. Transmission electron microscopy allows actual counting of the MoS2 layers, but is very complicated and requires destructive processing of the sample to the point where it will no longer be useable after characterization. Atomic force microscopy, particularly when operated in the tapping mode, is likewise time-consuming and suffers from certain anomalies caused by an improperly chosen set point, that is, free amplitude in air for the cantilever. Raman spectroscopy is a quick characterization method for identifying one to a few layers, but the laser irradiation causes structural degradation of the MoS2. Optical microscopy works only when MoS2 is on a silicon substrate covered with SiO2 of 100~300 nm thickness. The last two optical methods are commonly limited in resolution to the micrometer range due to the diffraction limits of light. We report here a method of measuring the distribution of the number of MoS2 layers using a low voltage field emission electron microscope with acceleration voltages no greater than 1 kV. We found a linear relationship between the FESEM contrast and the number of MoS2 layers. This method can be used to characterize MoS2 samples at nanometer-level spatial resolution, which is below the limits of other methods.

The unique characteristics of graphene make it an optimal material for crucial studies; likewise, its potential applications are numerous. Graphene’s characteristics change with the number of total layers, and thus the rapid and accurate estimation of the number of graphene layers is essential. In this work, we review the methods till date used to identify the number of layers but they incorporate certain drawbacks and limitations. To overcome the limitations, a combination of these methods will provide a direct approach to identify the number of layers. Here we correlate the data obtained from Raman spectroscopy, optical microscopy images, and atomic force microscopy to identify the number of graphene layers. Among these methods, correlation of optical microscopy images with Raman spectroscopy data is proposed as a more direct approach to reliably determine the number of graphene layers.