Phytohormones (plant hormones) are a class of small-molecule organic compounds synthesized de novo in plants. Although phytohormones are present in trace amounts, they play a key role in regulating plant growth and development, and in response to external stresses. Therefore, the analysis and monitoring of phytohormones have become an important research topic in precision agriculture. Among the various detection methods, electrochemical analysis is favored because of its simplicity, rapidity, high sensitivity, and in-situ monitoring. Graphene and graphene-like carbon materials have abundant sources, exhibiting large specific surface area, and excellent physicochemical properties. Thus, they have been widely used in the preparation of electrochemical biosensors for phytohormone detection. In this paper, the research advances of electrochemical sensors based on graphene and graphene-like carbon materials for phytohormone detection have been reviewed. The properties of graphene and graphene-like carbon materials are first introduced. Then, the research advances of electrochemical biosensors (including conventional electrochemical sensors, photoelectrochemical sensors, and electrochemiluminescence sensors) based on graphene and graphene-like carbon materials for phytohormone detection is summarized, with emphasis on their sensing strategies and the roles of graphene and graphene-like carbon materials in them. Finally, the development of electrochemical sensors based on graphene and graphene-like carbon materials for phytohormone detection is prospected.

Molybdenum disulfide ( MoS2) has been one of the most promising members of transition-metal dichalcogenides materials. Attributed to the excellent electrical performance and special physical properties, MoS2 has been broadly applied in semiconductor devices, such as field effect transistors (FETs). At present, the exploration of further improving the performance of MoS2- based FETs (such as increasing the carrier mobility and scaling) has encountered a bottleneck, and the application of high-κ gate dielectrics has become an effective approach to change this situation. Atomic layer deposition (ALD) enables high-quality integration of MoS2 and high-κ gate dielectrics at the atomic level. In this review, we summarize recent advances in the fabrication of two-dimensional MoS2 FETs using ALD high-κ materials as gate dielectrics. We first briefly discuss the research background of MoS2 FETs. Second, we expound the electrical and other essential properties of high-κ gate dielectrics, which are essential to the performance of MoS2 FETs. Finally, we focus on the advances in fabricating MoS2 FETs with ALD high-κ gate dielectrics on MoS2, as well as the optimized ALD processes. In addition, we also look forward to the development prospect of this field.