High-temperature friction performances of graphite blocks (GBs) and zinc phosphate impregnated graphite blocks (IGBs) were evaluated under various friction temperatures. The surface of IGB exhibited extremely lower average friction coefficient values, that was 0.007 at 400 °C and 0.008 at 450 °C, in comparison to that of GB (0.13 at 400 °C and 0.16 at 450 °C, respectively). The worn surface of IGB in the high-temperature friction test was smoother and more complete than that of GB. The wear under high temperature and load caused the transformation of zinc pyrophosphate to zinc metaphosphate and the formation of a continuous large-area boundary lubrication layer combined with graphite and metallic element on the wear surface. The superior tribology property of IGB could be attributed to the digestion of iron oxides by tribo-chemical reactions and passivation of the exposed dangling covalent bonds. Specifically, the layered structure generated on the IGB wear interface effectively decreased the adhesive forces and prevented the surface from serious damage.

High-performance carbon materials were prepared via a one-step molten salt carbonization of tobacco waste used as electrode materials for supercapacitors. Carbon material prepared by carbonization for 3 h in molten CaCl2 at 850 °C exhibits hierarchically porous structure and ideal capacitive behavior. In a three-electrode configuration with 1 mol L− 1 H2SO4 aqueous solution, it delivers specific capacitance of 196.5 F g− 1 at 0.2 A g− 1, energy density of 27.2 Wh kg− 1 at 0.2 A g− 1, power density of 983.5 W kg− 1 at 2 A g− 1, and excellent cyclic stability with 94% capacitance retention after 5000 charge–discharge cycles at 1 A g− 1. Moreover, in a symmetrical two-electrode configuration with 6 mol L− 1 KOH aqueous solution, it delivers specific capacitance of 111.1 F g− 1 at 0.2 A g− 1, energy density of 3.8 Wh kg− 1 at 0.2 A g− 1, and power density of 482.0 W kg− 1 at 2 A g− 1. The relationship between hierarchically porous structure and capacitive performance is also discussed.