The electrochemical properties of a CFX cathode were improved by defluorination of the surface with a N2 plasma and using a silica wafer. Compared to the N2 plasma treatment alone, when the CFX and silica were reacted together, the C-F bonds were modified and the surface was etched efficiently, so defluorination was enhanced. An electrochemical analysis confirmed that Half-cells prepared by treating CFx and silica with nitrogen plasma exhibited a capacity of about 400 mAh/g at 5C. In addition, it was confirmed that the loss of charge transfer was reduced by up to 71% compared to that for pristine CFX. As shown by a GITT analysis, when the CFx and silica were treated with N2 plasma together, the ion conductivity gradually increased due to a decrease in the ion diffusion barriers and the formation of a carbon layer. Therefore, this is a simple and effective way to improve the conductivities of CFX cathode materials with the energy of a N2 plasma and the silica-fluorine reaction.