The electrochemical properties of a CFX cathode were improved by defluorination of the surface with a N2 plasma and using a silica wafer. Compared to the N2 plasma treatment alone, when the CFX and silica were reacted together, the C-F bonds were modified and the surface was etched efficiently, so defluorination was enhanced. An electrochemical analysis confirmed that Half-cells prepared by treating CFx and silica with nitrogen plasma exhibited a capacity of about 400 mAh/g at 5C. In addition, it was confirmed that the loss of charge transfer was reduced by up to 71% compared to that for pristine CFX. As shown by a GITT analysis, when the CFx and silica were treated with N2 plasma together, the ion conductivity gradually increased due to a decrease in the ion diffusion barriers and the formation of a carbon layer. Therefore, this is a simple and effective way to improve the conductivities of CFX cathode materials with the energy of a N2 plasma and the silica-fluorine reaction.

The effects of different plasma agent species ( CF4, N2) over the conductivity of CFX cathode material were identified. Both plasma treatments have surface etching effect, while the CF4 plasma treatment has C–F bond modification effect and the N2 plasma treatment has defluorination effect. The changes of surface chemical species and porosity along the plasma agent were elucidated. Moreover, the electrochemical properties of plasma-treated CFX confirmed the effects of plasma treatments. The charge-transfer resistance of plasma-treated CFX was maximum 60.3% reduced than the pristine CFX. The effects of surface chemical modification coupled with etching along the plasma gas agents were compared and identified with their reaction mechanisms.