Electrical optical switching and structural transformation of Ge15Sb85, Sb65Se35 and N2.0 sccm doped Sb83Si17 were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of Ge15Sb85, Sb65Se35 and N2.0 sccm doped Sb83Si17 for crystallization was 120, 50 and 90 ns at 12 mW, respectively. Sb65Se35 was crystallized at 170˚C. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than 104Ω/γ.