In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm2 and Test was 5.61 × 10 A/cm2, which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitancevoltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 1012 cm2 in slow state density and 0.41 × 1013 cm2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 1011 cm2 in slow state density and 1.33 × 1012 cm2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.