Although stem cells are used as important cell therapies in regenerative medicine, the electrophysiological problems that arise in the expansion of cells have not been known much. This study was conducted to investigate the functional expression of inward rectifying K+ current (IKir) using a patch-clamp technique, and the change in the resting membrane potential and the membrane capacitance were investigated in mesenchymal stem cells derived from human umbilical vein (hUC-MSC). The IKir plays an important role in regulating the resting membrane potential in many cells and is known to contribute to the maintenance of intracellular K+ concentration. In this study, electrophysiologically recorded current exhibited typical IKir characteristics. The current shifted along the K+ equilibrium potential (Ek) with the extracellular K+ concentration change. In addition, IKir was blocked by the divalent Ba2+ in a dose-dependent manner. The frequency of functional expression of IKir changed with number of passages (P2: 5.3% vs P8: 77.8% vs P12: 34.5%). There was no significant change in the resting membrane potential of hUC-MSC (P2: -21.0 mV, P8: -20.1 mV and P12: -21.9 mV). However, the capacitance of the cell membrane was significantly changed after P9 (P2: 8.9 pF vs P9: 16.9 pF) compared to P2. All the results suggest that changes in electrophysiological distribution of IKir as the passages increase may cause changes in K+ permeability even in cell proliferation and differentiation, suggesting a possible physiological role in maintaining cell homeostasis and resting membrane potential (RMP).

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to 200 oC. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as 100 oC and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.