We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in TiO2thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ~5 nm thick TiO2 thin film, which is inherently an n-type semiconductor. The TiO2 thin film was deposited over QDs at 200˚C using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of TiO2/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of 220-280˚C. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.