Ni nanowires were fabricated using anodic aluminum oxide (AAO) membrane as a template by electrochemical deposition. The nanowires were formed within the walls of AAO template with 200 nm in pore diameter. After researching proper voltage and temperature for electrochemical deposition, the length of Ni nanowires was controlled by deposition time and the supply of electrolyte. The morphology and microstructure of Ni nanowires were investigated by field emission scanning electron microscope (FE-SE), X-ray diffraction (XRD) and transmission electron microscope (TEM).

TiO2 nanowires were self-catalytically synthesized on bare Si(100) substrates using metallorganic chemical vapor deposition. The nanowire formation was critically affected by growth temperature. The TiO2 nanowires were grown at a high density on Si(100) at 510˚C, which is near the complete decomposition temperature (527˚C) of the Ti precursor (Ti(O-iPr)2(dpm)2). At 470˚C, only very thin (< 0.1μm) TiO2 film was formed because the Ti precursor was not completely decomposed. When growth temperature was increased to 550˚C and 670˚C, the nanowire formation was also significantly suppressed. A vaporsolid (V-S) growth mechanism excluding a liquid phase appeared to control the nanowire formation. The TiO2 nanowire growth seemed to be activated by carbon, which was supplied by decomposition of the Ti precursor. The TiO2 nanowire density was increased with increased growth pressure in the range of 1.2 to 10 torr. In addition, the nanowire formation was enhanced by using Au and Pt catalysts, which seem to act as catalysts for oxidation. The nanowires consisted of well-aligned ~20-30 nm size rutile and anatase nanocrystallines. This MOCVD synthesis technique is unique and efficient to self-catalytically grow TiO2 nanowires, which hold significant promise for various photocatalysis and solar cell applications.

The purpose of this study was to assess an alternative method to characterize indoor environmental factors by multiple indoor and outdoor measurements. Using a mass balance model and regression analysis, penetration factor and source strength factor were calculated using multiple indoor and outdoor measurements. This study was performed in 30 selected apartments in Seoul, Asan, and Daegu area which were constructed within 4 years and over 4 years, to measure the concentration of NO₂ from July, 2004 to September. The results of this study are as follows. The average concentration of NO₂ in Seoul, Asan, and Daegu area in the apartment constructed within 4 years are nitrogen dioxide 48.01㎍/m³ and in the apartment over 4 years are nitrogen dioxide 46.54㎍/m³. Mean ratios of indoor to outdoor NO₂ concentrations are Seoul 0.99, Asan 0.83, Daegu 1.18. The deposition constant and the source strength of NO₂ were 0.97±0.55 hr-1 and 16.33±12.30 ppb/h, respectively. In conclusion, indoor environmental factors were effectively characterized by this method using multiple indoor and outdoor measurements.

A cobalt oxide - tin oxide nanocomposite based gas sensor on an SiO2 substrate was fabricated. Granular thin film of tin oxide was formed by a rheotaxial growth and thermal oxidation method using dc magnetron sputtering of Sn. Nano particles of cobalt oxide were spin-coated on the tin oxide. The cobalt oxide nanoparticles were synthesized by polymer-assisted deposition method, which is a simple cost-effective versatile synthesis method for various metal oxides. The thickness of the film can be controlled over a wide range of thicknesses. The composite structures thus formed were characterized in terms of morphology and gas sensing properties for reduction gas of H2. The composites showed a highest response of 240% at 250˚C upon exposure to 4% H2. This response is higher than those observed in pure SnO2 (90%) and Co3O4 (70%) thin films. The improved response with the composite structure may be related to the additional formation of electrically active defects at the interfaces. The composite sensor shows a very fast response and good reproducibility.

무에 대한 I2 증기의 작물체 침적속도와 뿌리 전류계수를 측정하기 위하여 파종 후 29 일에서 53 일 사이에 생육시기별로 작물체를 I2 증기에 80 분 간 피폭시켰다. 피폭은 오전 중에 투명한 상자 내에서 수행되었다. 침적속도(ms-1)는 대체로 1.0×10-4∼2.0×10-4의 범위로 생육밀도가 높을수록 증가하는 경향이었다. 또한 상대습도가 높을 경우 값이 커진다는 기존 보고와 어느 정도 일치하였다. 본 침적속도는 몇몇 야외 측정치보다 수 십 배 정도 낮았고 이는 주로 피폭상자 내의 낮은 풍속(0.2 ms-1 내외)에 기인하는 것으로 추정되었다. 뿌리 전류계수(작물체 총침적량에 대한 수확시 뿌리 내 함유량의 비)는 다소 보수적으로 계산하여 파종 후 29 일 피폭에서 1.3×10-3, 파종 후 53 일 피폭에서는 5,0×10-3이었다. 본 실험결과의 이용에 있어서는 기상 조건, 요오드의 물리화학적 형태 등에 유의할 필요가 있다.

본 연구에서는 TiO2 나노입자로 표면침적된 polyethersulfone (PES) 정밀여과 분리막이 자연유기물로 인한 분리막 막힘현상(파울링)에 미치는 영향을 관찰하였다. TiO2 나노입자로 표면침적된 PES 정밀여과 분리막의 자연유기물 파울링 거동에 TiO2 나노입자의 결정구조와 용액의 pH 그리고 Ca+2이 미치는 영향을 관찰하였다. 연구결과, TiO2 나노입자로 표면 개질된 정밀여과 분리막은 자연유기물에 의한 파울링 현상을 현저하게 감소시킬 수 있음을 확인 할 수 있었다. 그러나 이와같은 현상은 TiO2 나노입자의 결정구조와 용액의 성상에 매우 의존하는 것으로 나타났다. 자연유기물 파울링의 감소는 결정구조가 상대적으로 불안정한 anatase TiO2 나노입자를 분리막에 표면침적 시, 용액 중 Ca+2이 존재하지 않을 때 상대적으로 높은 pH에서 효과적인 것으로 관찰되었다. 그러나 Ca+2의 첨가 시 이와 같은 효과는 높은 pH에서 더욱 증가할 수 있음을 확인할 수 있었다. 반면, 결정구조가 상대적으로 안정한 rutile TiO2 나노입자의 경우 자연유기물의 파울링 감소는 용액의 조성에 큰 영향을 받지 않는 것으로 나타났다.

BiFeO3 (BFO) thin films were prepared on Pt/TiO2/Si substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of O2 gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and Bi2O3 phase at 30-50 mTorr, and the only Bi2O3 phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84~153 at 1 kHz. The leakage current density of the films deposited at 10~70 mTorr was about 7×10.6~1.5×10.2A/cm2 at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

Electrochemical deposition characteristics of CdSe nanorods were investigated for hybrid solar cell applications. CdSe nanorods were fabricated by electrochemical method in CdSO4 and H2SeO3 dissolved aqueous solution using an anodic aluminum oxide (AAO) template. Uniformity of CdSe nanorods was dependent on the diameter and the height of holes in AAO. The current density, current mode, bath composition and temperature were controlled to obtain a 1:1 atomic composition of CdSe. CdSe nanorods deposited by direct-current method showed better uniformity compared to those deposited by purse-current and/or purse-reverse current methods due to the bottom-up filling characteristics. H2SeO3 concentration showed more significant effects on pH of solution and stoichiometry of deposits compared to that of CdSO4. A 1:1 stoichiometry of uniform CdSe nanorods was obtained from 0.25M CdSO4-5 mM H2SeO3 electrolytes with a direct current of 10 mA/cm2 at room temperature. X-ray diffraction and electron diffraction pattern investigations demonstrate that CdSe nanorods are a uniform cubic CdSe crystal.

Graphene has been effectively synthesized on Ni/SiO2/Si substrates with CH4 (1 SCCM) diluted in Ar/H2(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 ˚C, although CH4 and Ar/H2 gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm-1, respectively. With increase of growth temperature to 900 ˚C, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 ˚C on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.

Transparent ITO films were deposited on a polycarbonate substrate with RF magnetron sputtering in a pure argon(Ar) and oxygen (O2) gas atmosphere, and then post deposition electro annealed for 20 minutes in a 4×10-1Pa vacuum. Electronbombardment with an accelerating voltage of 100V increased the substrate temperature to 120oC. XRD analysis of the depositedITO films did not show any diffraction peaks, while electro annealed films indicated the growth of crystallites on the (211), (222),and (400) planes. The sheet resistance of ITO films decreased from 103 to 82Ω/□. The optical transmittance of ITO films inthe visible wavelength region increased from 85 to 87%. Observation of the work function demonstrated that the electro-annealingincreased the work function of ITO films from 4.4 to 4.6eV. The electro annealed films demonstrated a larger figure of meritof 3.0×10-3Ω-1 than that of as deposited films. Therefore, the electro annealed films had better optoelectrical performances thanas deposited ITO films.

53 years old female showed repeated ulceration of labial gingival mucosa at upper and lower anterior teeth, which was a partly desquamated and erythematous lesion. The lesion was slightly extended into vestibule and buccal mucosa in oral cavity, but the similar lesion was not found in other organs by medical inspection. The incisional biopsy including the border of the ulcerated mucosa and normal mucosa showed a severely inflamed mucosa, of which epithelium was gradually detached from the underlying conective tissue, so that it was diagnosed as a mucous membrane pemphigoid (MMP) pathologically. The epithelium was thinned, almost lost its rete pegs, and the basement membrane was completely distorted by the epithelial detachement. The inflammatory cell infiltration was mainly composed of small round cells and plasma cells. Immunohistochemistry was performed to know the expression of pathogenetic proteins using antisera of Igk, E-cadherin, laminin a5, elafin, and eIF5A. The basement membrane at the epithelial detachment was condensely positive for Igk, and the involved epithelium became atrophic but showed consistently positive reaction of matrix proteins and protein translation factor, i.e., E-cadherin, laminin a5, elafin, and eIF5A similar to the adjacent normal mucosa continuous to the MMP lesion. The Igk was also diffusely deposited on the basement membrane of nearby normal mucosa. Many plasma cells infiltrated around the lesion were strongly positive for Igk in their cytoplasms. Therefore, we suggest that the MMP be characterized by the deposition of Igk on the basement membrane of the detached epithelium in the absence of no other pathognomic changes of molecular events.

Vapor phase polymerization of a conductive polymer on a SiO2 surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a SiO2 surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a μ-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a SiO2 surface. In addition, the conductivity of polymeric thin films was relatively high (~13.51 S/cm).

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with 1~2nm height and 40~50nm diameter were formed by the S-K growth mode. Dome shape InGaN dots with 200~400nm diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

We present the structural, optical, and electrical properties of amorphous silicon suboxide (a-SiOx) films grown on indium tin oxide glass substrates with a radio frequency magnetron technique from a polycrystalline silicon oxide target using ambient Ar. For different substrate-target distances (d = 8 cm and 10 cm), the deposition temperature effects were systematically studied. For d = 8cm, oxygen content in a-SiOx decreased with dissociation of oxygen onto the silicon oxide matrix; temperature increased due to enlargement of kinetic energy. For d = 10 cm, however, the oxygen content had a minimum between 150˚ and 200˚. Using simple optical measurements, we can predict a preferred orientation of liquid crystal molecules on a-SiOx thin film. At higher oxygen content (x > 1.6), liquid crystal molecules on an inorganic liquid crystal alignment layer of a-SiOx showed homogeneous alignment; however, in the lower case (x< 1.6), liquid crystals showed homeotropic alignment.

제올라이트 분리막을 형성시키기 위하여 결정핵으로 작용할 수 있는 동일한 제올라이트 입자들을 다공성 지지체 위에 균일하게 도포하는 기술을 개발하고자 하였다. 제올라이트 입자들을 수용액에 분산시킨 다음 이 수용액을 튜브형 다공성 세라믹 지지체에 일정 유속으로 공급하고, 세라믹 지지체의 반대편에 진공을 유지하여 일부 수용액이 지지체를 통과하면서 동시에 제올라이트 입자들을 지지체 표면에 도포하였다. 수용액 상에 분산된 제올라이트의 농도, 도포시간 그리고 분산 수용액의 공급속도 등이 결정핵 도포량에 미치는 영향을 고찰하였다. 공급유속이 100 mL/min, 도포시간이 4분인 경우 농도가 0.01 wt%에서 0.3 wt%로 증가할수록 도포량이 0.0019 g에서 0.0208 g으로 증가하였다. 농도가 0.01 wt%, 공급유속이 100 mL/min인 경우 도포시간이 1분에서 4분으로 증가하는 경우 도포량이 0.0004 g에서 0.0019 g으로 증가함을 알 수 있었다. 또한 농도가 0.3 wt%이고, 도포시간이 1분일 때 유속이 100 mL/min에서 300 mL/min으로 빨라진 경우 도포량이 0.002 g에서 0.01 g으로 증가함을 알 수 있었다. 그러나 도포량이 증가할수록 제올라이트 분리막을 통한 물과 에탄올의 총투과속도는 감소함을 확인할 수 있었다.

The properties of pyrolytic carbon (PyC) deposited from C2H2 and a mixture of C2H2/C3H6 on ZrO2 particles in a fluidized bed reactor were studied by adjusting the deposition temperature, reactant concentration, and the total gas flow rate. The effect of the deposition parameters on the properties of PyC was investigated by analyzing the microstructure and density change. The density could be varied from 1.0 g/cm3 to 2.2 g/cm3 by controlling the deposition parameters. The density decreased and the deposition rate increased as the deposition temperature and reactant concentration increased. The PyC density was largely dependent on the deposition rate irrespective of the type of the reactant gas used.

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [Ge(allyl)4], and germane (GeH4) as precursors. Ge thin films were grown on a TiN(50nm)/SiO2/Si substrate by varying the growth conditions of the reactive gas (H2), temperature (300-700˚C) and pressure (1-760Torr). H2 gas helps to remove carbon from Ge film for a Ge(allyl)4 precursor but not for a GeH4 precursor. Ge(allyl)4 exhibits island growth (VW mode) characteristics under conditions of 760Torr at 400-700˚C, whereas GeH4 shows a layer growth pattern (FM mode) under conditions of 5Torr at 400-700˚C. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

본 연구는 경남 산림지역의 산성강하물과 토양 화학적 특성의 관련성 조사를 위하여 수행하였다. 토양 pH는 평균 4.40이었으며, 가장 높은 조사구는 밀양 산내 조사구로 pH 5.02였고, 가장 낮은 조사구는 pH 4.08의 남해 서면이었다(p〈0.05). 산림토양내 유기물, 유효인산, 칼륨, 칼슘, 마그네슘, 양이온치환용량(CEC)은 지역별 유의차가 있었다(p〈0.05). 산림토양내 중금속 함량은 납이 평균 3.86mg/kg이었고, 거제 신현이 9.87mg/kg으로 가장 높았으며, 밀양 산내가 0.86mg/kg으로 가장 낮았다(p〈0.05). 토양의 화학적 특성과 강우산도의 상관은 토양 pH(r=0.7826**), 칼슘 (r=0.6278*), 마그네슘(r=0.5841*), 양이온치환용량(r=0.6341**), 카드뮴(r=0.5995*)과 정의 상관이었고, 납(r=-0.5283*)은 부의 상관이었다. 대기 중의 SO2, 농도와 상관은 토양 pH(r=-0.6796**), 칼슘(r=-0.5810*), 마그네슘(r=-0.5522*), 양이온치환용량(r=-0.5905*)과 부의 상관이었다. 대기 중의 NO2, 농도와 상관은 유기물(r=0.6208*), 칼륨(r=0.5380*)과 정의 상관이었다. 따라서 강우산도 및 대기 중의 SO2는 토양의 산성화에 영향을 미치는 것으로 사료되며, 그리고 토양 내 중금속 함량에 영향을 미치는 것은 Cd와 Pb함량과 관련성이 있으며, 그 외 중금속의 영향은 없었다.

Hemp seed oil and evening primrose oil were incorporated into the diets of laying hens for 5 weeks and the level of gamma fatty acid in the eggs that the treated hens laid was then evaluated. Hens were fed corn-soybean based diets that contained 5% tallow, 5% corn oil (CO), 5% hemp seed oil (HSO), or 5% evening primrose oil (EPO). The hemp seed oil and evening primrose oil influenced the amount of gamma linolenic acid found in the eggs through blood. The level of gamma linolenic acid in the plasma was significantly higher in hens that received the HSO and EPO diets than in those that received the tallow and CO diets. The HSO and EPO diets led to a 1.09% and 4.87% increase in egg gamma linolenic acids, respectively, when compared with eggs produced by hens treated with tallow and CO. Taken together, these data demonstrate that healthy eggs with increased gamma linolenic acids can be generated by minor diet modifications when hemp seed oil or evening primrose oil is included in the hen diet.