Halide perovskite solar cells (PSCs) have improved rapidly over the past few years, and research on the optoelectrical properties of halide perovskite thin films has grown as well. Among the characterization techniques, photoluminescence (PL), a method of collecting emitted photons to evaluate the properties of materials, is widely applied to evaluate improvements in the performance of PSCs. However, since only photons emitted from the film in the escape cone are included, the photons collected in PL are a small fraction of the total photons emitted from the film. Unlike PSCs power conversion efficiency, PL measuring methods have not been standardized, and have been evaluated in a variety of ways. Thus, an in-depth study is needed of the methods used to evaluate materials using PL spectra. In this study, we examined the PL spectra of the perovskite light harvesting layer with different measurement protocols and analyzed the features. As the incident angle changed, different spectra were observed, indicating that the PL emission spectrum can depend on the measuring method, not the material. We found the intensity and energy of the PL spectra changes were due to the path of the emitted photons. Also, we found that the PL of halide perovskite thin films generally contains limited information. To solve this problem, the emitted photons should be collected using an integrating sphere. The results of this study suggest that the emission spectrum of halide perovskite films should be carefully interpreted in accordance with PL measuring method, since PL data is mostly affected by the method.

Aluminum nitride having a dense hexagonal structure is used as a high-temperature material because of its excellent heat resistance and high mechanical strength; its excellent piezoelectric properties are also attracting attention. The structure and residual stress of AlN thin films formed on glass substrate using TFT sputtering system are examined by XRD. The deposition conditions are nitrogen gas pressures of 1 × 102, 6 × 103, and 3 × 103, substrate temperature of 523 K, and sputtering time of 120 min. The structure of the AlN thin film is columnar, having a c-axis, i.e., a <00·1> orientation, which is the normal direction of the glass substrate. An X-ray stress measurement method for crystalline thin films with orientation properties such as columnar structure is proposed and applied to the residual stress measurement of AlN thin films with orientation <00·1>. Strength of diffraction lines other than 00·2 diffraction is very weak. As a result of stress measurement using AlN powder sample as a comparative standard sample, tensile residual stress is obtained when the nitrogen gas pressure is low, but the gas pressure increases as the residual stress is shifts toward compression. At low gas pressure, the unit cell expands due to the incorporation of excess nitrogen atoms.

Cr thin films with O added are deposited on sapphire substrate by DC sputtering and are nitrided in NH3 atmosphere between 300 and 900 oC for various times. X-ray diffraction results show that nitridation begins at 500 oC, forming CrN and Cr2N. Cr oxides of Cr2O3 are formed at 600 oC. And, at temperatures higher than 900 oC, the intermediate materials of Cr2N and Cr2O3 disappear and CrN is dominant. The atomic concentration ratios of Cr and O are 77% and 23%, respectively, over the entire thickness of as-deposited Cr thin film. In the sample nitrided at 600 oC, a CrN layer in which O is substituted with N is formed from the surface to 90 nm, and the concentrations of Cr and N in the layer are 60% and 40%, respectively. For this reason, CrN and Cr2N are distributed in the CrN region, where O is substituted with N by nitridation, and Cr oxynitrides are formed in the region below this. The nitridation process is controlled by inter-diffusion of O and N and the parabolic growth law, with activation energy of 0.69 eV.

휘어지며 투명한 전자기기의 개발을 위해서 최근 유기반도체, 탄소기반 나노소재, 금속산화물 반도체등의 다양한 신소재 반도체 개발에 대한 연구가 관심을 받으며 지속적으로 발전하고 있다. 그러나, 이러한 신소재 반도체 기술의 꾸준하고 지속적인 발전에도 불구하고 트랜지스터를 구성하는 주요 소재중 하나인 유전체에 대한 연구는 반도체의 개발속도에 크게 미치지 못하여, 기계적인 휘어짐의 특성을 갖추고, 높은 캐패시턴스와 좋은 누전전류 특성을 갖는 새로운 유전체 개발에 대한 요구가 지속적으로 커지고 있다. 이에 본 연구는 저전압에서 구동 가능한 박막트랜지스터를 위한 유기-무기 하이브리드소재 박막을 개발하며 이를 저전압 구동이 가능한 유기박막트랜지스터에 적용하였다. 상대적으로 높은 유전상수를 갖는 염화하프늄 (HfO2)과 소수성기를 갖고 있으며 금속산화물과 공유결합이 가능한 실란산 기반의 유기물 (octadecyltrimethoxysilane)을 혼합한 전구체 용액을 합성하며 상대적으로 낮은 온도에서 열처리를 통해 얻을 수 있었다. 제조된 하이브리드 게이트 유전체 박막은 우수한 절연 및 유전체 특성과 함께 소수성 표면 특성을 가질 수 있었고 펜타센 유기박막트랜지스터로 응용하여 저전압에서 구동이 되며 우수한 트랜지스터 성능을 갖는 소자를 개발하였다.

The SnSe single crystal shows an outstanding figure of merit (ZT) of 2.6 at 973 K; thus, it is considered to be a promising thermoelectric material. However, the mass production of SnSe single crystals is difficult, and their mechanical properties are poor. Alternatively, we can use polycrystalline SnSe powder, which has better mechanical properties. In this study, surface modification by atomic layer deposition (ALD) is chosen to increase the ZT value of SnSe polycrystalline powder. SnSe powder is ground by a ball mill. An ALD coating process using a rotary-type reactor is adopted. ZnO thin films are grown by 100 ALD cycles using diethylzinc and H2O as precursors at 100oC. ALD is performed at rotation speeds of 30, 40, 50, and 60 rpm to examine the effects of rotation speed on the thin film characteristics. The physical and chemical properties of ALD-coated SnSe powders are characterized by scanning and tunneling electron microscopy combined with energy-dispersive spectroscopy. The results reveal that a smooth oxygenrich ZnO layer is grown on SnSe at a rotation speed of 30 rpm. This result can be applied for the uniform coating of a ZnO layer on various powder materials.

연구에서는 새로 설계한 고분자 절연체 위에 전자 주개(Donor)-받개(Acceptor) 기반의 반도체성 공중합체인 Cyclopentadithiophene-alt-benzothiadiazole (CDT-BTZ)를 활성 반도체층으로 형성하여 제작한 고분자 반도체 전계효과 트랜지스터의 전기적 특성을 살펴보았다. 이 연구에서 제시하는 고분자 절연체 박막은 내열성과 전기절연성이 우수한 포스파젠과 멜리민 구조가 가교된 형태를 가지기 때문에 0.006 nm의 매우 평탄한 RMS 표면 거칠기를 가졌으며, 4.5 MV/cm 이상의 매우 우수한 절연강도와 1.55의 다소 낮은 유전 상수를 가진 것으로 측정되었다. 그리고, 고분자 절연 막과 계면을 이루는 CDT-BTZ D-A 타입 반도체성 공중합체 박막은 2.0 x 10-3 cm2/Vs의 선형영역 이동도와 1.0 x 10-3 cm2/Vs의 포화영역 이동도를 갖는 것으로 측정되었다. 이를 통해, 고분자 절연체 위에 형성된 CDT-BTZ 고분자 반도체 박막은 유연 전자회로의 스위칭 소자로 쓰이기에 충분한 잠재성이 있다고 여겨진다.

Using UV nanoimprint lithography(UV-NIL), 1-dimensional(1-D) pattern structures were fabricated on a hybrid mixture thin film of lanthanum oxide and a UV-curable resin. 1-D pattern on a wafer fabricated by the laser interference lithography was transferred to polydimethylsiloxane and this is used as a mold of UV-NIL process. Conducting an X-ray photoelectron spectroscopy, C 1s and La 3d spectra were analyzed, and it was confirmed that hybrid thin film was successfully deposited on glass substrate. Also, transferred pattern structure was observed by using an atomic force microscopy. Through this, it was revealed that agglomerations between 1-D pattern were increased as UV irradiation time increased and this phenomenon disrupted the quality of NIL process. Additionally, liquid crystal(LC) cells with patterned hybrid thin films were fabricated and LC alignment performances were investigated. Using the polarizing optical microscopy and the crystal rotation method, LC alignment state and pretilt angles were observed. Consequently, the uniform homogeneous LC alignment was achieved at UV irradiation time of 1min and 3min where high resolution pattern transfer was observed.

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 oC. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10−4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

나노여과를위한 박막 나노복합체(TFN) 멤브레인 기술의 발전은 천연 자원에서 오염 물질을 제거하는 데 중요하 다. 최근에는 기존의 박막 복합체(TFC) 및 나노복합체 멤브레인에서 불가피한 단점을 극복하기 위해 다양한 금속유기구조체 (MOF) 수정이 테스트되었다. 일반적으로 MIL-101(Cr), UiO-66, ZIF-8 및 HKUST-1 [Cu3(BCT2)]은 용매 투과성 및 용질 제 거 측면에서 막 성능을 현저하게 향상시키는 것으로 입증되었다. 이 리뷰에서는 이러한 MOF가 나노 여과에 미치는 영향에 대 한 최근 연구가 논의될 것이다. 서로 다른 금속유기구조체의 동시 사용 및 고유한 금속유기구조체 레이어링 기술(예: 딥 코팅, 스프레이 사전 배치, Langmuir-Schaefer 필름 등)과 같은 다른 새로운 기능도 멤브레인 성능을 향상시켰다. 이러한 MOF 변 형 TFN 멤브레인은 각각의 TFC 및 TFN 멤브레인에서 분리 성능을 향상시키는 것으로 자주 나타났을 뿐만 아니라 많은 보 고서에서 비용 효율적이고 환경 친화적인 공정에 대한 잠재력을 설명한다.

Silicon heterojunction solar cells can achieve high conversion efficiency with a simple structure. In this study, we investigate the passivation characteristics of VOx thin films as a hole-selective contact layer using ALD (atomic layer deposition). Passivation characteristics improve with iVoc (implied open-circuit voltage) of 662 mV and minority carrier lifetime of 73.9 μs after post-deposition annealing (PDA) at 100 oC. The improved values are mainly attributed to a decrease in carbon during the VOx thin film process after PDA. However, once it is annealed at temperatures above 250 oC the properties are rapidly degraded. X-ray photoelectron spectroscopy is used to analyze the chemical states of the VOx thin film. As the annealing temperature increases, it shows more formation of SiOx at the interface increases. The ratio of V5+ to V4+, which is the oxidation states of vanadium oxide thin films, are 6:4 for both as-deposition and annealing at 100 oC, and 5:5 for annealing at 300 oC. The lower the carbon content of the ALD VOx film and the higher the V5+ ratio, the better the passivation characteristics.