Purpose: The purpose of this study is to understand the nature of the health promotion behavior of the high-risk group of cardiovascular disease among large-scale industrial manufacturing workers. Method: The subjects of this study were 11 workers at high-risk of cardiovascular disease with a Framingham Risk Score (FRS) score of 10% or more among workers at large-scale workplace in Gyeongsangbukdo area, and the data collection period is from July 1 to September 11, 2022. The interview data were inductively analyzed using the qualitative content analysis method used by Elo and Kyngas (2008). Result: Participants' awareness of their own health status and knowledge of cardiovascular disease were low, and there were more obstacles than benefits to health behavior. The process and method of realizing and practicing health care were also different. As a result of qualitative content analysis, 42 semantic units, 12 subcategories, and 3 upper categories were derived. The health promotion behavior of workers at high-risk for cardiovascular disease was categorized into ‘Awareness of health conditions’, ‘Obstacles to health care behavior’, ‘Health care practice process’. Conclusion: Since most of the workers spend a lot of time at work, it is necessary to understand the health care of high-risk workers with cardiovascular disease, so a qualitative study using participatory observation methods to observe workers’ work sites is recommended.

In this experimental work, a p-type c-Si (100) substrate with 8 × 8 × 2 mm dimension was taken for TiCN thin-film coating deposition. The whole deposition process was carried out by chemical vapor deposition (CVD) process. The Si substrate was placed within the CVD chamber at base pressure and process pressure of 0.75 and 500 mTorr, respectively, in the presence of TiO2 (99.99% pure) and C (99.99% pure) powder mixture. Later on, quantity of C powder was varied for different set experiments. The deposition of TiCN coating was carried out in the presence of N2– H2–TiCl4–CH3CN gas mixture and 600 ℃ of fixed temperature. The time for deposition was fixed for 90 min with 10 and 5 ℃ min− 1 heating and cooling rate, respectively. Later on, heat treatment process was carried out over these deposited TiCN samples to investigate the changing characteristics. The heat treatment was carried out at 800 ℃ within the CVD chamber in the absence of any gas flow rate. The morphological properties of heat-treated samples have been improved significantly, evidence is observed from SEM and AFM analyses. The structural analysis by XRD has been suggested, upgradation in crystallinity of the heat-treated film as it possessed with sharp and higher intensity peaks. Evidence has been found that the electrochemical properties are enhanced for heat-treated sample. Raman spectroscopy shows that the intensity of acoustic phonon modes predominates the optic phonon modes for untreated samples, whereas for heat-treated samples, opposite trends have been observed. However, significant degradation in mechanical properties for heat-treated sample has been observed compared to untreated sample.

In this study, a ZnS film of 8-mm thickness was prepared on graphite using a hot-wall-type CVD technique. The ZnS thick film was then hot isostatically pressed under different pressures (125–205 MPa) in an argon atmosphere. The effects of pressure were systematically studied in terms of crystallographic orientation, grain size, density, and transmittance during the HIP process. X-ray diffraction pattern analysis revealed that the preferred (111) orientation was well developed after a pressure of 80 MPa was applied during the HIP process. A high transmittance of 61.8% in HIPZnS was obtained under the optimal conditions (1010oC, 205MPa, 6 h) as compared with a range of approximately 10% for the CVD-ZnS thick film under a 550-nm wavelength. In addition, the main cause of the improvement in transmittance was determined to be the disappearance of the scattering factor due to grain growth and the increase in density.

The present paper describes the effect of co-catalyst on the growth of multiwall carbon nanotube (MWCNT) by chemical vapor deposition (CVD) technique. The fascinating properties of CNT make them a suitable material for optoelectronic devices such as sensors, LED, solar cell, and field emission displays. MWCNTs were fabricated using CVD, by decomposing ethanol over finely dispersed Co metal as a catalyst at 750 °C. The effects of growth condition on the quality and morphology of MWCNTs were investigated by SEM, FTIR and XRD. SEM photographs show that the nanotubes are densely packed having a diameter of 10–15 nm. The bandgap was calculated by UV–visible spectroscopy and it was found varying from 3.08 to 3.5 eV by changing the substrates. The average size of tubes (length) was found to be 250 nm. FTIR exhibited that the synthesized MWCNTs were semiconducting in nature with the oxygen vacancies causing the variations in refractive index with the exposure of moisture.

We study substrate support structures and materials to improve uptime and shorten preventive maintenance cycles for chemical vapor deposition equipment. In order to improve the rolling of the substrate support, the bushing device adopts a ball transfer method in which a large ball and a small ball are mixed. When the main transfer ball of the bushing part of the substrate support contacts the substrate support, the small ball also rotates simultaneously with the rotation of the main ball, minimizing the resistance that can be generated during the vertical movement of the substrate support. As a result of the improvement, the glass substrate breakage rate is reduced by more than 90 ~ 95 %, and the equipment preventive maintenance and board support replacement cycles are extended four times or more, from once a month to more than four months, and the equipment uptime is at least 15 % improved. This study proposes an optimization method for substrate support structure and material improvement of chemical vapor deposition equipment.

The results of gas chromatography–mass spectrometry (GC–MS) demonstrate that the volatiles captured by diamond grown by chemical vapour deposition (CVD) technology contain hydrocarbons and their derivatives (72.2 rel. %). We have identified aliphatic (paraffins and olefins), cyclic (naphthenes and arenes) and oxygenated (alcohols, aldehydes, ketones and carboxylic acids) hydrocarbons, as well as nitrogenated and sulfonated compounds. Water, negligible amounts of CO2 and Ar were also detected among the volatile components.

This study focused on the development of Fe–Co/kaolin catalyst by a wet impregnation method. Response surface methodology was used to study the influence of operating variables such as drying temperature, drying time, mass of support and stirring speed on the yield of the catalyst. The catalyst composite at best synthesis conditions was then calcined in an oven at varied temperature and time using 22 factorial design of experiment. The catalyst with optimum surface area was then utilized to grow carbon nanofiber (CNF) in a chemical vapour deposition (CVD) reactor. Both the catalyst and CNF were characterized using high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, thermogravimetric analysis (TGA), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy. On the influence of operating variables on the yield of catalyst, the results showed that an optimum yield of 96.51% catalyst was obtained at the following operating conditions: drying time (10 h), drying temperature (110 °C), stirring speed (100 rpm) and mass of support (9 g). Statistical analysis revealed the existence of significant interactive effects of the variables on the yield of the catalyst. The HRSEM/XRD/BET/TGA analysis revealed that the particles are well dispersed on the support, with high surface area (376.5 m2/g) and thermally stable (330.88 °C). The influence of operating parameters on the yield of CNF was also investigated and the results revealed an optimum yield of 348% CNF at the following operating conditions: reaction temperature (600 °C), reaction time (40 min), argon flow rate (1416 mL/min) and acetylene/hydrogen flow rate (1416 mL/ min). It was found from statistical analysis that the reaction temperature and acetylene/hydrogen flow rates exerted significant effect on the CNF yield than the other factors. The contour and surface plots bi-factor interaction indicated functional relationship between the response and the experimental factors. The characterization results showed that the synthesized CNF is thermally stable, twisted and highly crystalline and contain surface functional groups. It can be inferred from the results of various analyses that the developed catalyst is suitable for CNF growth in a CVD reactor.

현대인의 눈높이에 맞는 친환경적인 고급품질의 인조진주 제품개발이 세계의 악세사리 및 생활용품 시장에서 요구되고 있다. 본 연구는 고품질의 인조진주 제품을 경제적으로 대량생산하기 위한 방법으로 유기안료를 인조진주 제조용 친환경 무기안료로 대체하고 기존 제조 방식에서 사용하는 주재료였던 니트로셀룰로오스를 우레탄 바인더로 대체하여 광택도가 73.4%에서 86.7%로 증가하였으며 CVD 마감처리 후에는 96%의 높은 광택도를 가졌다. 색차분석 결과 CVD 코팅으로 인하여 빛의 간섭효과 때문에 a*와 b*값이 각각 +37.7에서 +31.9로, +24.5에서 +14.2로 감소하면서 다양한 색을 발현하여 영롱한 빛깔의 인조진주가 제조되었다. 마감 증착된 고품질의 인조진주의 내화학성, 광택도, 색차계, 표면 거칠기, 내마모성, 중금속함량검사, 염수분무테스트 등을 분석하여 품질향상 및 인체 무해성을 확인하였다.

An ultra-high temperature ceramic, tantalum carbide, has received much attention for its favorable characteristics: a superior melting point and chemical compatibility with carbon and other carbides. One drawback is the high temperature erosion of carbon/carbon (C/C) composites. To address this drawback, we deposited TaC on C/C with silicon carbide as an intermediate layer. Prior to the TaC deposition, the TaCl5-C3H6-H2 system was thermodynamically analyzed with FactSage 6.2 and compared with the TaCl5-CH4-H2 system. The results confirmed that the TaCl5-C3H6-H2 system had a more realistic cost and deposition efficiency than TaCl5-CH4-H2. A dense and uniform TaC layer was successfully deposited under conditions of Ta/C = 0.5, 1200 oC and 100 torr. This study verified that the thermodynamic analysis is appropriate as a guide and prerequisite for carbide deposition.

Graphene is well-known as a perfect barrier because of its dense and delocalized cloud consisting of p-orbitals. However, graphene membrane synthesized by chemical vapor deposition (CVD) intrinsically contains structural defects (e.q., grain boundaries and point defects), which allow any small molecules to penetrate through the defective graphene membrane. Here we prepared polycrystalline graphene membranes including such defects, and investigated the gas transport behavior through the graphene membrane. Also, we compared the gas permeation behavior (or barrier properties) of large-area, single crystalline graphene membrane without any structural defects.

The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, (CH3)2Si(OCH3)2, and CxHyOz by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

In this study, modified catalytic chemical vapor deposition (CCVD) method was applied to control the CNTs (carbon nanotubes) growth. Since titanium (Ti) substrate and iron (Fe) catalysts react one another and form a new phase (Fe2TiO5) above 700℃, the decrease of CNT yield above 800℃ where methane gas decomposes is inevitable under common CCVD method. Therefore, we synthesized CNTs on the Ti substrate by dividing the tube furnace into two sections (left and right) and heating them to different temperatures each. The reactant gas flew through from the end of the right tube furnace while the Ti substrate was placed in the center of the left tube furnace. When the CNT growth temperature was set 700/950℃ (left/right), CNTs with high yield were observed. Also, by examining the micro-structure of CNTs of 700/950℃, it was confirmed that CNTs show the bamboo-like structure.

In order to determine the wear properties of CVD ceramic coatings, wear process was evaluated using the coated pin of Falex Tribosystem. Also, in order to determine the effects of coating material on wear process, TiC,N of thickness 5m∼6m coated by Thermal CVD method were applied. The wear property of TiC,N film, the higher the deposition temperature was, the closer the lattice parameter was to the amount of the standard power, and the grain size increased. According to the wear formation, under the control that there is on specific wear rate wear parameter and coating delamination, decrease with increasing sliding friction and when the coating delamination happened.

본 연구에서는 CVD법으로 세라믹 막을 제조하였다. 튜브의 α-Al2O3 지지체 위에 Ga 염이 첨가된 γ-Al2O3를 코팅하였고, 실란화합물인 tetramethylorthosilane (TMOS) 를 650℃에서 화학적 기상 증착법으로 막에 증착하였다. 제조된 세라믹 막을 사용하여 수소, 질소, 이산화탄소, 메탄의 단일조성 기체투과 실험을 600℃에서 시행하였다. Ga 염 비첨가 시, 600℃ 수분 처리 실험의 H2/N2 선택도가 926에서 829로 감소한 반면, Ga 염 첨가 시에는 910에서 904로 안정하였다. 이 결과를 통해, 막에 금속염을 첨가하여 제조한 막이 수분 안정성을 향상시킴을 확인하였다.

The a-Si:H/c-Si hetero-junction (HJ) solar cells have a variety of advantages in efficiency and fabrication processes. It has already demonstrated about 23% in R&D scale and more than 20% in commercial production. In order to further reduce the fabrication cost of HJ solar cells, fabrication processes should be simplified more than conventional methods which accompany separate processes of front and rear sides of the cells. In this study, we propose a simultaneous deposition of intrinsic thin a-Si:H layers on both sides of a wafer by dual hot wire CVD (HWVCD). In this system, wafers are located between tantalum wires, and a-Si:H layers are simultaneously deposited on both sides of the wafer. By using this scheme, we can reduce the process steps and time and improve the efficiency of HJ solar cells by removing surface contamination of the wafers. We achieved about 16% efficiency in HJ solar cells incorporating intrinsic a-Si:H buffers by dual HWCVD and p/n layers by PECVD.

Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in H2 (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without H2 showed an intensity ratio of IG/I2D = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in H2 ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and 700˚C. The graphene films grown on 260-nm thick Ni films at 900˚C showed the lowest IG/I2D ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at 700˚C for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.

Multilayered coatings on tungsten carbide cutting tools are widely used for enhancing cutting performance. In this paper, we review the CVD TiC/TiCN multilayer as a function of the multilayer period. The TiC/TiCN multilayers in initial stage show preferred (220) orientation but shifts to (200) orientation with decreasing multilayer period. The nanohardness of TiC/TiCN multilayers were found to increase with decreasing multilayer period and shows a maximum of 23.8 GPa at a period = 33.5 nm.

Taguchi methodology has been applied to get an idea about the parameters related to the chemical vapour deposition technique, which influences the formation of semiconducting carbon thin film of a desired band gap. L9 orthogonal array was used for this purpose. The analysis based on Taguchi methodology suggests that amongst the parameters selected, the temperature of pyrolysis significantly controls the magnitude of band gap (46%). Sintering time has a small influence (30%) on the band gap formation and other factors have almost no influence on the band gap formation. Moreover this analysis suggests that lower temperature of pyrolysis (≤ 750℃) and lower time of sintering (≤ 1 h) should be preferred to get carbon thin film with the desired band gap of 1.2eV.