이 연구는 문화예술의 활성화를 위해 조상대대로 전승되어온 한국 문화 양식을 탐색하고 그동 안의 고정된 전통예술 시각에서 벗어나 새로운 의식의 전환을 꾀하는데 목적이 있다. 오늘날 문화예술은 사회 환경이 변화하면서 세분화되었고 그 시스템은 총체적 형태로 변화하였다. 그럼에도 불구하고 그동안 한국의 총체예술인 가·무·악(歌·舞·樂)의 세부적 본질에 대한 이 론적 연구가 부족하였다. 이 연구에서는 세부적으로 가·무·악의 이론적 개념을 짚어 본다. 그리고 종합예술형태의 가·무·악에서 가(歌)와 무(舞)와 악(樂)의 분리, 변화양상을 시대적으로 보고 자 한다. 마지막으로 역사 속에서 종합예술 형태로 지금까지 전해져 오는 <항장무(項莊舞>에 대해 살펴보고, 현재 종합예술 형태로 공연되는 정동극장 <미소- 춘향연가>을 통해 종합예술을 활용하여 문화상품으로 발전된 사례를 검토해 보도록 한다. 20세기 이후 점차 과거 예인(藝人)들이 설 무대가 점점 줄어들면서 한국 전통문화 양식 또한 흔들리고 있다. 이제라도 예인들의 삶 속에 내재되어 있는 기교적·정신적 원류를 우리는 정밀하 게 탐색하여야 한다. 가·무·악의 세요소가 종합적으로 어우러짐은 장르간의 벽을 허물고 우리 예술양식을 받아들임에 이질감을 없앨 수 있다. 이제 서양의 공연양식의 틀에서 벗어나 우리만의 전통예술에 관심을 가지고 한국적인 공연양식을 발전시켜 세계 속에 유일한 우리만의 공연양식으 로 문화 패러다임을 바꿔가야 할 것이다.

The aim of this study was to review Byung-Kwa-Ryu recipes in old cookbooks of the head & noble family (Jong-Ga). As for details and classification, we examined the materials and recipes of Byung-Kwa-Ryu. To accomplish this, old cookbooks of the head & noble family (「Soowoonjabbang」,「Eumsikdimibang」,「Onjubub」, and「Jusiksiui」) were reviewed. The introduced Byung-Kwa-Ryu recipes numbered 47 total; four from「Soowoonjabbang」, 18 from「Eumsikdimibang」, nine from「Onjubub」, and 16 from「Jusiksiui」. We classified the foods (Byung-Kwa_Ryu) into two categories, Tteok-Ryu (Korean rice cake) and Kwa-Jung-Ryu (Korean traditional cookie), on the basis of previous studies. These were further classified into 11 categories: Tteok-Ryu (Jjin-tteok, Salmeun-tteok, Chin-tteok, Jijin-tteok), Kwa-Jung-Ryu (Yumilkwa, Yukwa, Jeongkwa, Dasik, Kwapyun, Dang (Yeot), and others. The most common Byung-Kwa-Ryu type was Jjin-tteok in Tteok-Ryu (14). The next most common Byung-Kwa-Ryu types were Yukwa in Kwa-Jung-Ryu (6) and Yumilkwa in Kwa-Jung-Ryu (5).

본 연구에서는 GA 2.5% 도포제 처리가 자두 과실의 생리적 낙과 억제 및 과실 품질에 미치는 영향을 검토하였다. ‘포모사’ 과실에 대한 GA 도포제 처리는 과실의 생리적 낙과를 경감시켰으며 수정 후 처리시기가 빠를수록 생리적 낙과방지 효과가 높았다. ‘포모사’ 품종에 GA 도포제를 처리하고 착과율을 조사한 결과, 착과 율은 만개 후 3일 처리에서 61%, 만개 후 13일 처리에서 15%로 무처리 5%에 비해 현저히 높았다. GA 도포 제 처리구에서 착과율 증가는 ‘하니레드’, ‘추희’ 품종 에도 유사한 경향이었다. 또한, GA 도포제 처리는 과실의 비대 및 과실 성숙에 영향을 주었다. GA 도포제 처리구에서 ‘포모사’ 과실의 비대 양상을 조사한 결과, 만개 후 80일까지는 대조구와 유사하였으나, 만개 후 80일 이후에 대조구에 비해 과실 무게가 높게 나타났다. GA 처리된 ‘포모사’ 과실은 과중이 약간 높고, 당도, 산 함량 및 경도는 약간 낮은 것으로 나타났다. 그리고, ‘포모사’ 과실에서는 수확기 직전 즉 만개 후 85일경에 sucrose 함량이 증가하는데 GA 처리는 sucrose 함량 증가시기를 앞당겼다. 이를 종합하면, GA 도포제 처리는 자두에서 과실 생리적 낙과를 경감시켰으며 또한 과실의 성숙을 촉진하고 성숙기에 과실 비대를 촉진하였다.

This study attempted to manufacture a Cu-Ga coating layer via the cold spray process and to investigate the applicability of the layer as a sputtering target material. In addition, changes made to the microstructure and prop- erties of the layer due to annealing heat treatment were evaluated, compared, and analyzed. The results showed that coating layers with a thickness of 520 mm could be manufactured via the cold spray process under optimal conditions. With the Cu-Ga coating layer, the α-Cu and Cu3Ga were found to exist inside the layer regardless of annealing heat treatment. The microstructure that was minute and inhomogeneous prior to thermal treatment changed to homogeneous and dense with a more clear division of phases. A sputtering test was actually conducted using the sputtering target Cu- Ga coating layer (~2 mm thickness) that was additionally manufactured via the cold-spray coating process. Consequently, this test result confirmed that the cold sprayed Cu-Ga coating layer may be applied as a sputtering target material.

본 연구는 ‘피오네’ 포도 무핵재배 생력화를 위한 생장조정제 이용과 착과량 조절이 과실의 특성과 품질에 미치는 영향을 구명하고자 실시하였다. 착과량 조절에 의한 과방중은 신초당 70립/1송이로 하였을 때, 681.6 g으로 가장 무거웠으며,35립/2송이에서 가장 낮은 결과를 나타냈다. 과립중은 신초당50립/1송이에서 10.1 g으로 가장 높은 결과를 보였던 반면, 송이수 및 착립수가 많을수록 낮아졌다. 품질은 신초당 50립/1송이에서 당도는 17.3 oBrix로 다른 처리구에 비해 유의하게높았고, 안토시아닌, 명도, 적색도 등도 좋았다. 수확기는 농가관행 70립/1송이 처리구의 8월 하순 대비 50립/1송이 처리구에서는 8월 상순으로 20일 정도 단축되었다. 이로서 신초당50립/1송이의 500 g 정도의 착과량 조절이 상품성 향상에 적정하였다. 무핵 생력화를 위한 GA3 + TDZ 혼용 1회 처리에서 과방중은 TDZ 농도가 높을수록 무거운 경향을 보였으며, 대조구 568.9 g 대비 모든 처리구에서 낮은 과방중을 보였으나,GA325 mg·L−1 + TDZ 10 mg·L−1처리 구에서 상품성을 향상할수 있었다. GA3에 CPPU와 TDZ 혼용 2차 처리의 경우, 과방중은 처리 농도가 높은 GA325 mg·L−1+CPPU 20 mg·L−1처리 구에서 694.2 g으로 가장 무거웠으며, GA325 mg·L−1 + TDZ 5 mg·L−1처리구와 GA325 mg·L−1+CPPU 10 mg·L−1처리 구에서 당도가 높고, 산도는 낮아 품질 면에서 상품성이 우수하였고,과립비대에 TDZ보다 CPPU의 영향을 더 잘 받는 것으로 나타났다. 전엽 5매 출현시 GA3 5 mg·L−1처리 구에서 착립밀도 개선에 노동력 절감 효과가 있음을 알 수 있었다.

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x+y+z=1, x=0.05, y=0.02 and z=0.93) were preparedon glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substratetemperature of 350oC. The effects of the sputtering power on the structural, morphological, electrical, and optical propertiesof MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown asa hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, Ga2O3, orZnGa2O4. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputteringpower increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as thesputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin filmsshowed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power.MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrierconcentration (4.71×1020cm−3), charge carrier mobility (10.2cm2V−1s−1) and a minimum resistivity (1.3×10−3Ωcm). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80% in the visibleregion and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from270nm to 340nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from3.74eV to 3.92eV with the change in the sputtering power.

The main aim of this study was to investigate side dishes served to guests of head families (Jong-ga) in Korea. In order to conduct of this research, we analyzed two books published by the Rural Development Administration (RDA) on the foods and the stories from head families: "Sharing beyond succession, stories and foods from the head families" and "Aesthetics of Serving". The total number of head families serving foods to guests was 10: 5 from Gyeongsangbuk-do, 2 from Jeollanam-do, 1 from Gyeonggi-do, 1 from Gyeongsangnam-do, and 1 from Chungcheongbuk-do. We classified the foods into 7 categories, staple dishes, side dishes, rice cakes, desserts, beverages, alcoholic beverages and others, on the basis of previous studies. Most foods served to guests were side dishes (119). These were further classified into 14 categories: Guk Tang, Namul, Hwe, Bokkeum, Mareunchan, Gui, Jorim, Pyeonyuk Jokpyoen Suran, Jiim Seon, Jeon Jeok, Jangajji, Kimchi, Jeotgal Sikhae and Jang. The most common side dish was Jangs (17), served by 8 head families. The next most common side dishes were Marenchan (15), Jeon Jeok (14) and Kimchi (11).

Trivalent cerium-ion-doped Y3(Al, Ga)5O12 nanoparticle phosphor nanoparticles were synthesized using the reversemicelle process. The Ce doped Y3(Al, Ga)5O12 particles were obtained from nitrate solutions dispersed in the nanosized aqueousdomains of a micro emulsion consisting of cyclohexane as the oil phase and poly(oxyethylene) nonylphenyl ether (Igepal CO-520) as the non-ionic surfactant. The crystallinity, morphology, and thermal properties of the synthesized Y3(Al, Ga)5O12:Ce3+powders were characterized by thermogravimetry-differential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD),scanning electron microscopy (SEM), and transmission electron microscopy. The crystallinity, morphology, and chemical statesof the ions were characterized; the photo-physical properties were studied by taking absorption, excitation, and emission spectrafor various concentrations of cerium. The photo physical properties of the synthesized Y3(Al, Ga)5O12:Ce3+ powders werestudied by taking the excitation and emission spectra for various concentrations of cerium. The average particle size of thesynthesized YAG powders was below 1µm. Excitation spectra of the Y3Al5O12 and Y3Al3.97Ga1.03O12 samples were 485nmand 475nm, respectively. The emission spectra of the Y3Al5O12 and Y3Al3.97Ga1.03O12 were around 560nm and 545nm,respectively. Y3(Al, Ga)5O12:Ce3+ is a red-emitting phosphor; it has a high efficiency for operation under near UV excitation,and may be a promising candidate for photonic applications.

본 연구에서는 CVD법으로 세라믹 막을 제조하였다. 튜브의 α-Al2O3 지지체 위에 Ga 염이 첨가된 γ-Al2O3를 코팅하였고, 실란화합물인 tetramethylorthosilane (TMOS) 를 650℃에서 화학적 기상 증착법으로 막에 증착하였다. 제조된 세라믹 막을 사용하여 수소, 질소, 이산화탄소, 메탄의 단일조성 기체투과 실험을 600℃에서 시행하였다. Ga 염 비첨가 시, 600℃ 수분 처리 실험의 H2/N2 선택도가 926에서 829로 감소한 반면, Ga 염 첨가 시에는 910에서 904로 안정하였다. 이 결과를 통해, 막에 금속염을 첨가하여 제조한 막이 수분 안정성을 향상시킴을 확인하였다.

In this study, we mainly focus on the study of densification of gas-atomized Cu-50 wt.%In-13 wt.%Ga alloy powder without occurrence of crack during the forming process. Cu-50 wt.%In-13 wt.%Ga alloy powder was consolidated by sintering and rolling processes in order to obtain high density. The phase and microstructure of formed materials were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical microscopy (OM), respectively. Warm rolling using copper can result in the improvement of density. The specimen obtained with 80% of rolling reduction ratio at using cooper can have the highest density of .

Chalcogenide-based semiconductors, such as CuInSe2, CuGaSe2, Cu(In,Ga)Se2 (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of 104cm-1, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

칠레산 야생화 종자는 발아율이 낮고, 종자의 등숙 정도가 불량하다. 이에 본 연구는 광조건 그리고 GA3(50mg/L, 100mg/L, 200mg/L)와 KNO3(0.1%, 0.2%, 0.4%) 처리가 5종의 칠레산 야생화 종자의 발아율에 미치는 영향을 알아보고자 수행되었다. 광조건 실험에서 Schizanthus candidus, Schizanthus hookerii, Schizanthus litoralis 종은 명조건에서는 발아가 전혀 이루어지지 않았다. GA3와 KNO3 처리에서는 Mimulus luteus, Schizanthus candidus, Schizanthus hookerii 종은 GA3-200mg/L 처리구에서 무처리구에 비해 각각 2.3배, 5.6배, 3.2배의 발아율 증가효과를 보였다. 그러나 Rhodophiala ananuca 종은 GA3-50mg/L 처리구에서 다소 높은 발아율을 나타냈다. 발아율이 낮은 칠레산 야생화 종자의 발아 촉진에는 식물 종자의 휴면타파의 효과가 있는 GA3 처리가 효과적인 것으로 생각된다.

I found evidence that Kim Y ˘ong (金泳, 1749-1817) is the author of the Korean Poch' ˘on'ga with New Charts published in 1792 by the Astronomical Bureau of the Chos ˘on dynasty. I reconstructed a history of Kim Y ˘ong from various literature remained in other persons' anthologies and governmental records. My findings on the author and publication year can help to solve the problem on the origin of star charts in the Poch' ˘on'ga with New Charts. I also considered the changes of Chinese Bu-Tian-Ge and their star charts after Chongzhenglishu (崇禎曆書). I found that the new charts in the book of Huantiantushuo published by Li Mingche (李明徹, 1751-1832) in 1819 are approximately the same to those in the Poch' ˘on'ga with New Charts by Kim Y ˘ong in 1792.

This study attempted to manufacture a Cu-15 at.%Ga coating layer via the cold spray process and investigated the effect of heat treatment environment on the properties of cold sprayed coating material. Three kinds of heat treatment environments, +argon, pure argon, and vacuum were used in this study. Annealing treatments were conducted at /1 hr. With the cold sprayed coating layer, pure -Cu and small amounts of were detected in the XRD, EDS, EPMA analyses. Porosity significantly decreased and hardness also decreased with increasing annealing temperature. The inhomogeneous dendritic microstructure of cold sprayed coating material changed to the homogeneous and dense one (microstructural evolution) with annealing heat treatment. Oxides near the interface of particles could be reduced by heat treatment especially in vacuum and argon environments. Vacuum environment during heat treatment was suggested to be most effective one to improve the densification and purification properties of cold sprayed Cu-15 at.%Ga coating material.

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used Cu2In3, CuGa and Cu2Se sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of Cu2In3, CuGa and Cu2Se showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and Cu2Se phases. After selenization at 550˚C for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin Cu2Se layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

Cu(In, Ga)Se2 (CIGS) precursor films were electrodeposited on Mo/glass substrates in acidic solutions containingCu2+, In3+, Ga3+, and Se4+ ions at −0.6V (SCE) and pH 1.8. In order to induce recrystallization, the electrodepositedCu1.00In0.81Ga0.09Se2.08 (25.0at.% Cu+20.2at.% In+2.2at.% Ga+52.0at.% Se) precursor films were annealed under a highSe gas atmosphere for 15, 30, 45, and 60 min, respectively, at 500oC. The Se amount in the film increased from 52at.% to62at.%, whereas the In amount in the film decreased from 20.8at.% to 9.1at.% as the annealing time increased from 0 (as-deposited state) to 60 min. These results were attributed to the Se introduced from the furnace atmosphere and reacted withthe In present in the precursor films, resulting in the formation of the volatile In2Se. CIGS precursor grains with a cauliflowershape grew as larger grains with the CuSe2 and/or Cu2-xSe faceted phases as the annealing times increased. These faceted phasesresulted in rough surface morphologies of the CIGS films. Furthermore, the CIGS layers were not dense because the emptyspaces between the grains were not removed via annealing. Uniform thicknesses of the MoSe2 layers occurred at the 45 and60 min annealing time. This implies that there was a stable reaction between the Mo back electrode and the Se diffused throughthe CIGS film. The results obtained in the present research were sufficiently different from comparable studies where therecrystallization annealing was performed under an atmosphere of Ar gas only or a low Se gas pressure.

The crystal structure and magnetic properties of a new solid solution type ferrite (Fe2O3)5-(Al2O3)3.4-(Ga2O3)0.6-SiO were investigated using X-ray diffraction and Mössbauer spectroscopy. The results of the X-ray diffraction pattern indicated that the crystal structure of the sample appears to be a cubic spinel type structure. The lattice constant (a = 8.317 Å) decreases slightly with the substitution of Ga2O3 even though the ionic radii of the Ga ions are larger than that of the Al ions. The results can be attributed to a higher degree of covalency in the Ga-O bonds than in the Al-O and Fe-O bonds, which can also be explained using the observed Mössbauer parameters, which are the magnetic hyperfine field, isomer shift, and quadrupole splitting. The drastic change in the magnetic structure according to the Ga ion substitution in the (Fe2O3)5(Al2O3)4-x(Ga2O3)xSiO system and the low temperature variation have been studied through a Mössbauer spectroscopy. The Mössbauer spectrum at room temperature shows the superpositions of two Zeeman patterns and a strong doublet. It shows significant departures from the prototypical ferrite and is comparable with the diluted ferrite. The doublet of spectrum at room temperature appears to originate from superparamagnetic clusters and also the asymmetry of the doublet appears to be caused by the preferred orientation of the crystallites. The Mössbauer spectra below room temperature show various complicated patterns, which can be explained by the freezing of the superparamagnetic clusters. On cooling, the magnetic states of the sample were various and multi critical.

향료 및 약용 수종으로 가치 있는 좀목형 (Vitex negundo var. insica)의 기내증식 기술을 개발하고자 3 년생 나무의 당년생 신초지로부터 채취한 신초의 기내 증식 및 발근에 미치는 생장조절제의 효과를 구명하 였다. 다경줄기 유도는 0.5-2.0 mg/L BA가 첨가된 WPM 배지에서 효과적이었고, 가장 많은 줄기 수 (7.9개/절편)는 1.0 mg/L BA 농도에서 얻었다. 줄기 생장은 WPM 기본배지에서 1-2개의 우세 줄기로 자 라는 특징이 있었고 길이는 3.4 cm 정도이었다. BA 2.0 + GA 0.5 mg/L 혼용처리는 증식과 더불어 생장 을 촉진하는 효과를 보였다. 줄기 증식 시 처리된 생장조절제는 차후의 발근에 영향을 미치는 것으로 나타 났다. 전반적으로 BA 처리로 유도된 줄기는 차후 발근도 잘되었으나 고농도 BA 처리 (4.0 mg/L)는 발근 을 억제하였다. 저농도의 TDZ 처리도 BA 처리와 유사한 경향을 보였으나 0.5 mg/L 농도로 유도된 줄기 는 발근이 현저히 억제되었고 그 이상의 농도에서 유도된 줄기는 전혀 발근되지 못했다. 증식 시 BA에 IBA를 혼용처리하면 증식은 물론 차후의 발근에 가장 좋은 것으로 나타났다. 이상의 결과는 약용가치가 뛰어난 좀목형의 기내배양을 통한 효율적인 증식 가능성을 보여주었다.

We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by anRF magnetron sputtering at various RF powers from 50 to 90W. All the GZO thin films are grown as a hexagonal wurtzitephase with highly c-axis preferred parameters. The structural and electrical properties are strongly related to the RF power. Thegrain size increases as the RF power increases since the columnar growth of GZO thin film is enhanced at an elevated RFpower. This result means that the crystallinity of GZO is improved as the RF power increases. The resistivity of GZO rapidlydecreases as the RF power increases up to 70W and saturates to 90W. In contrast, the electron concentration of GZO increasesas the RF power increases up to 70W and saturates to 90W. GZO thin film shows the lowest resistivity of 2.2×10−4Ωcmand the highest electron concentration of 1.7×1021cm−3 at 90W. The mobility of GZO increases as the RF power increasessince the grain boundary scattering decreases due to the reduced density of the grain boundary at a high RF power. Thetransmittance of GZO thin films in the visible range is above 90%. GZO is a feasible transparent electrode for application asa transparent electrode for thin film solar cells.

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RFmagnetron sputtering at various deposition temperatures from 100 to 500oC. All the GZO thin films are grown as a hexagonalwurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to depositiontemperature. The grain size increases with the increasing deposition temperature up to 400oC and then decreases at 500oC. Thedependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivityof GZO thin film decreases with the increasing deposition temperature up to 300oC and then decreases up to 500oC. GZO thinfilm shows the lowest resistivity of 4.3×10−4Ωcm and highest electron concentration of 1.0×1021cm−3 at 300oC. The mobilityof GZO thin films increases with the increasing deposition temperature up to 400oC and then decreases at 500oC. GZO thinfilm shows the highest resistivity of 14.1cm2/Vs. The transmittance of GZO thin films in the visible range is above 87% atall the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thinfilm solar cells.