Reaction-bonded silicon carbide (RBSC) is a SiC-based composite ceramic fabricated by the infiltration of molten silicon into a skeleton of SiC particles and carbon, in order to manufacture a ceramic body with full density. RBSC has been widely used and studied for many years in the SiC field, because of its relatively low processing temperature for fabrication, easy use in forming components with a near-net shape, and high density, compared with other sintering methods for SiC. A radiant tube is one of the most commonly employed ceramics components when using RBSC materials in industrial fields. In this study, the mechanical strengths of commercial RBSC tubes with different sizes are evaluated using 3-point flexural and C-ring tests. The size scaling law is applied to the obtained mechanical strength values for specimens with different sizes. The discrepancy between the flexural and C-ring strengths is also discussed.

본 연구는 창조경제혁신센터의 향후 활용에 관한 논의를 목적으로 한다. 하지 만 단순한 활용은 의미가 없다. 새로운 방식으로 탈바꿈 시킬 필요가 있다. 본 연구는 이에 관심을 가지면서 창조경제혁신센터형 생태계의 변화방향에 대한 단서를 얻는 것을 연구목적 으로 하였다. 연구는 다음의 과정을 거쳤다. 첫째, 창조생태계 비교를 위한 기준을 이론적 고 찰을 통해 도출하였다. 둘째, 도출된 기준을 중심으로 실리콘 밸리, 교토생태계 및 창조경제 혁신센터형 생태계를 비교하였다. 셋째, 이런 분석을 통하여 창조경제혁신센터형 생태계 변 화방향에 대한 논의를 하였다. 변화방향으로는 교토생태계가 적합할 것으로 제시되었다. 단, 정부의 역할은 직접적 통제에서 환경조성, 예로 지역 창조경제혁신센터형 생태계가 살아날 수 있도록 자극하는 규제완화와 시장형성을 돕는 것 등에 국한되어야 할 것으로 제시하였다.

탄화규소(Silicon Carbide, SiC) 세라믹 멤브레인은 알루미나 원료의 세라믹 멤브레인보다 높은 친수성을 나타내어 동일한 압력 하에 높은 수투과도 유지가 가 능하다. 이러한 탄화규소 세라믹 멤브레인을 혐기성 생물막 반응조(Anaerobic Membrane Bioreactor, AnMBR)에 설치하여 고농도의 생물반응조 운전에도 불구하고 낮고 안정된 운전압력을 유지할 수 있었으며, 막오염 현상의 획기적인 저감이 가능하였다. 본 연구에서는 도시하수와 음폐수를 혼합 처리함에 있어서 탄화규소 세라믹 멤브레인을 적용한 AnMBR의 운전결과를 알루미나 세라믹 멤브레인을 적용한 경우와 비교 평가하였다.

건강기능식품에서 이산화규소 분석 방법을 확립하기 위하여 산(불산과 붕산)분해를 이용한 ICP-OES 방법을 수행하였다. 이 방법의 검출한계와 정량한계는 각각 0.07 mg/ L, 0.20 mg/L 이었다. 검량선은 0.2~20.0 mg/L의 농도범위 에서 우수한 직선성(r2 0.99)을 보였다. 글루코사민 제품에 이산화규소 0.4, 1.0, 2.0% (w/w)를 첨가하여 시험한 결과 90.22~94.14%의 회수율과 0.72~1.67%의 정밀성을 나타내었다. 확립된 방법으로 시중에 유통되는 건강기능식품 11 품목의 이산화규소 함량을 분석한 결과 0.02~1.80% (w/w) 로 나타났다. 이 결과는 건강기능식품에 이산화규소의 사 용기준 2% (w/w) 이하를 만족하는 결과로 시험한 제품들 은 규격에 적합하였다. 따라서 본 연구에서 확립된 이 방법은 건강기능식품 중 이산화규소를 쉽고, 빠르게 분석할 수 있으며, 건강기능식품 중 이산화규소 함량 분석에 효율 적으로 사용될 수 있다

In commercial solar cells, the pattern of the front electrode is critical to effectively assemble the photo generated current. The power loss in solar cells caused by the front electrode was categorized as four types. First, losses due to the metallic resistance of the electrode. Second, losses due to the contact resistance of the electrode and emitter. Third, losses due to the emitter resistance when current flows through the emitter. Fourth, losses due to the shading effect of the front metal electrode, which has a high reflectance. In this paper, optimizing the number of finger on a 4 ´ 4 solar cell is demonstrated with known theory. We compared the short circuit current density and fill factor to evaluate the power loss from the front metal contact calculation result. By experiment, the short circuit current density(Jsc), taken in each pattern as 37.61, 37.53, and 37.38 mA/ cm2 decreased as the number of fingers increased. The fill factor(FF), measured in each pattern as 0.7745, 0.7782 and 0.7843 increased as number of fingers increased. The results suggested that the efficiency(Eff) was measured in each pattern as 17.51, 17.81, and 17.84 %. Throughout this study, the short-circuit current densities(Jsc) and fill factor(FF) varied according to the number of fingers in the front metal pattern. The effects on the efficiency of the two factors were also investigated.

In order to improve the high temperature oxidation resistance and lifespan of mat type porous carbon insulation, SiC was coated on carbon insulation by solution coating using polycarbosilane solution, curing in an oxidizing atmosphere at 200 oC, and pyrolysis at temperatures up to 1200 oC. The SiOC phase formed during the pyrolysis process was converted into SiC crystals as the heat treatment temperature increased, and a SiC coating with a thickness of 10-15 nm was formed at 1600 oC. The SiC coated specimen showed a weight reduction of 8.6 % when it was kept in an atmospheric environment of 700 oC for 1 hour. On the other hand, the thermal conductivity was 0.17W/mK, and no difference between states before and after coating was observed at all.

Fast fashion is a hot trend, facilitated by advances in technology. But how fast should fashion be? Surprisingly, some answers may come from Silicon Valley, one of the geekiest and least fashion-conscious places on earth. This talk explains why changing technological epochs and changing fashion trends are more similar than one might think, and explores, using agent-based models, the conditions under which fashion should be fast, and when it should be slow.

Reactive Ion Etching (RIE) and wet etching are employed in existing texturing processes to fabricate solar cells. Laser etching is used for particular purposes such as selective etching for grooves. However, such processes require a higher level of cost and longer processing time and those factors affect the unit cost of each process of fabricating solar cells. As a way to reduce the unit cost of this process of making solar cells, an atmospheric plasma source will be employed in this study for the texturing of crystalline silicon wafers. In this study, we produced the atmospheric plasma source and examined its basic properties. Then, using the prepared atmospheric plasma source, we performed the texturing process of crystalline silicon wafers. The results obtained from texturing processes employing the atmospheric plasma source and employing RIE were examined and compared with each other. The average reflectance of the specimens obtained from the atmospheric plasma texturing process was 7.88 %, while that of specimens obtained from the texturing process employing RIE was 8.04 %. Surface morphologies of textured wafers were examined and measured through Scanning Electron Microscopy (SEM) and similar shapes of reactive ion etched wafers were found. The Power Conversion Efficiencies (PCE) of the solar cells manufactured through each process were 16.97 % (atmospheric plasma texturing) and 16.29% (RIE texturing).

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped Si/SiO2 substrate. Consequently, we observed an enhancement of the performance of the GNRtransistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

Tri-isotropic (TRISO) coatings on zirconia surrogate beads are deposited using a fluidized-bed vapor deposition (FB-CVD) method. The silicon carbide layer is particularly important among the coated layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO-coated particles. In this study, we obtain a nearly stoichiometric composition in the SiC layer coated at 1400oC, 1500oC, and 1400oC with 20 vol.% methyltrichlorosilane (MTS), However, the composition of the SiC layer coated at 1300-1350oC shows a difference from the stoichiometric ratio (1:1). The density decreases remarkably with decreasing SiC deposition temperature because of the nanosized pores. The high density of the SiC layer (≥ 3.19 g/cm2) easily obtained at 1500oC and 1400oC with 20 vol.% MTS did not change at an annealing temperature of 1900°C, simulating the reactor operating temperature. The evaluation of the mechanical properties is limited because of the inaccurate values of hardness and Young’s modulus measured by the nano-indentation method.

With the increase in installed solar energy capacity, comparison and analysis of the physical property values of solar cells are becoming increasingly important for production. Therefore, research on determining the physical characteristic values of solar cells is being actively pursued. In this study, a diode equation, which is commonly used to describe the I-V behavior and determine the electrical characteristic values of solar cells, was applied. Using this method, it is possible to determine the diode ideality factor (n) and series resistance (Rs) based on light I-V measurements. Thus, using a commercial screen-printed solar cell and an interdigitated back-contact solar cell, we determined the ideality factor (n) and series resistance (Rs) with a modified diode equation method for the light I-V curves. We also used the sun-shade method to determine the ideality factor (n) and series resistance (Rs) of the samples. The values determined using the two methods were similar. However, given the error in the sun-shade method, the diode equation is considered more useful than the sun-shade method for analyzing the electrical characteristics because it determines the ideality factor (n) and series resistance (Rs) based on the light I-V curves.

Chrysanthemums (Dendranthema grandiflorum ‘Iwanohakusen’) were grown in a greenhouse with complete nutrient solution system to investigate the effect of silicon (Si) supplement on salt induced deleterious effects in chrysanthemum plants. The experiment was conducted in plastic pots supplemented with a mixture of upland soil : leaf mold : river sand (3:3:4, v:v:v). Si and salinity were treated in combination with two levels of NaCl (0 and 100 mM) and two sources of silicon (K2SiO3, KSi and silicate fertilizer, SiF) at the same concentration (1.8 mM Si) by weekly-drenching for 12 weeks. Chrysanthemum plants supplemented with Si increased in fresh and dry matter enhancing water content and salinity tolerance. The plants grown under salt stress produced less fresh and dry matter than control plant. However, Si supplement to plants under salt stress ameliorated negative effects of salt stress. In soil, EC and NaCl increased by salt stress were mitigated by Si supplement. Salt stress significantly decreased the contents of K and P in leaf, but Si supplement under salt stress significantly recovered the decreased contents with enormous desorption of K and P in soil. Added Si significantly increased content of available SiO2 with its adsorption by salt stress in soil, which was directly related to Si accumulation in leaf. However, Si uptake by roots was suppressed by salt stress irrespective of Si supplement. Si supplement did not ameliorated the negative effects of salt stress on chlorophyll content and membrane integrity in leaf of chrysanthemum plant although significantly increased Si content in leaf, but reversed pest (Liriomyza trifolii) resistance to above-control level.

Waste SiC powders obtained from silicon wafer sludge have very low density and a narrow particle size distribution of 10-20 μm. A scarce yield of C and Si is expected when SiC powders are incorporated into the Fe melt without briquetting. Here, the briquetting variables of the SiC powders are studied as a function of the sintering temperature, pressure, and type and contents of the binders to improve the yield. It is experimentally confirmed that Si and C from the sintered briquette can be incorporated effectively into the Fe melt when the waste SiC powders milled for 30 min with 20 wt.% Fe binder are sintered at 1100oC upon compaction using a pressure of 250 MPa. XRF-WDS analysis shows that an yield of about 90% is obtained when the SiC briquette is kept in the Fe melt at 1650oC for more than 1 h.

Silicon nitride (SiNx:H) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride (SiNx:H) films made by PECVD. The passivation properties of SiNx:H are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane (SiH4) and ammonia (NH3) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitancevoltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.

For research and development of Silicon Carbide (SiC) mirrors, the Korea Astronomy and Space Science Institute (KASI) and National Optical Astronomy Observatory (NOAO) have agreed to cooperate and share on polishing and measuring facilities, experience and human resources for two years (2014-2015). The main goals of the SiC mirror polishing are to achieve optical surface figures of less than 20 nm rms and optical surface roughness of less than 2 nm rms. In addition, Green Optics Co., Ltd (GO) has been interested in the SiC polishing and joined the partnership with KASI. KASI will be involved in the development of the SiC polishing and the optical surface measurement using three dierent kinds of SiC materials and manufacturing processes (POCOTM, CoorsTekTM and SSGTM corporations) provided by NOAO. GO will polish the SiC substrate within requirements. Additionally, the requirements of the optical surface imperfections are given as: less than 40 um scratch and 500 um dig. In this paper, we introduce the international collaboration and interim results for SiC mirror polishing and development.

In photovoltaic power generation where minority carrier generation via light absorption is competing against minority carrier recombination, the substrate thickness and material quality are interdependent, and appropriate combination of the two variables is important in obtaining the maximum output power generation. Medici, a two-dimensional semiconductor device simulation tool, is used to investigate the interdependency in relation to the maximum power output in front-lit Si solar cells. Qualitatively, the results indicate that a high quality substrate must be thick and that a low quality substrate must be thin in order to achieve the maximum power generation in the respective materials. The dividing point is 70 μm/5 × 10−6 sec. That is, for materials with a minority carrier recombination lifetime longer than 5 × 10−6 sec, the substrate must be thicker than 70 μm, while for materials with a lifetime shorter than 5 × 10−6 sec, the substrate must be thinner than 70 μm. In substrate fabrication, the thinner the wafer, the lower the cost of material, but the higher the cost of wafer fabrication. Thus, the optimum thickness/lifetime combinations are defined in this study along with the substrate cost considerations as part of the factors to be considered in material selection.

Anodic aluminum oxide (AAO) has been widely used for the development and fabrication of nano-powder with various morphologies such as particle, wire, rod, and tube. So far, many researchers have reported about shape control and fabrication of AAO films. However, they have reported on the shape control with different diameter and length of anodic aluminum oxide mainly. We present a combined mild-hard (or hard-mild) anodization to prepare shape-controlled AAO films. Two main parameters which are combination mild-hard (or hard-mild) anodization and run-time of voltage control are applied in this work. The voltages of mild and hard anodization are respectively 40 and 80 V. Anodization was conducted on the aluminum sheet in 0.3 mole oxalic acid at 4oC. AAO films with morphologies of varying interpore distance, branch-shaped pore, diameter-modulated pore and long funnel-shaped pore were fabricated. Those shapes will be able to apply to fabricate novel nano-materials with potential application which is especially a support to prevent volume expansion of inserted active materials, such as metal silicon or tin powder, in lithium ion battery. The silicon powder electrode using an AAO as a support shows outstanding cycle performance as 1003 mAh/g up to 200 cycles.

For rear metallization with Al paste, Al back contacts require good passivation, high reflectance, and a processing temperature window compatible with the front metal. In this paper, the effect of the firing ambient during the metallization process on the formation of Al rear metal was investigated. We chose three different gases as ambient gases during the firing process. Using SEM, we observed the formation of a back surface field in N2, O2, and Air ambients. To determine the effect of the ambient on Voc, the suns-Voc tool was used. In this study, we described the mechanism of burn-out of organic materials in Al paste during the firing process. The oxygen ambient plays an important role in the burn-out process. We calculated the efficiency with obtained the back surface recombination velocities using PC1D simulation. It was found that the presence of oxygen during the firing process influenced the uniform back surface field because the organic materials in the Al paste were efficiently burned out during heating. The optimized temperature with oxygen flow shows an absolute efficiency of 19.1% at PC1D simulation.