본 연구에서는 막증류법에서 문제가 되는 젖음 현상을 방지하기 위해 분리막의 표면을 초소수성으로 개질하고, 젖음 현상의 가속화를 통해 초소수성 표면의 젖음 방지의 평가에 관한 연구를 진행하였다. 분리막의 표면을 물리적 처리를 통해 기공을 키우고, 산화 처리를 통해 하이드록실기를 형성시켜 성장을 준비한다. 성장을 통해 표면에서부터 형성된 나노 입자를 통해 코팅 방법이 가지는 분리막과 나노 입자 사이의 불안정성을 해결하였고, 성장한 나노 입자의 화학적 개질을 통해 초소수성 막을 준비하였다. 준비된 분리막은 막 증류법의 운전 도중 계면활성제를 첨가함으로써 젖음 현상의 가속화를 통해 개질 전후의 방지효과를 비교하였고, sonication 처리를 통해 나노 입자와 분리막 사이의 안정성을 확인하였다.

Materials with appropriate surface roughness and low surface energy can form superhy-drophobic surfaces, displaying water contact angles greater than 150°. Superhydrophobic carbon-based materials are particularly interesting due to their exceptional physicochemical properties. This review discusses the various techniques used to produce superhydrophobic carbon-based materials such as carbon fibers,carbon nanotubes, graphene, amorphous car-bons, etc. Recent advances in emerging fieldssuch as energy, environmental remediation, and thermal management in relation to these materials are also discussed.

This study is carried out to develop the new process for the fabrication of ultra-fine electrodes on the flexible substrates using superhydrophobic effect. A facile method was developed to form the ultra-fine trenches on the flexible substrates treated by plasma etching and to print the fine metal electrodes using conductive nano-ink. Various plasma etching conditions were investigated for the hydrophobic surface treatment of flexible polyimide (PI) films. The micro-trench on the hydrophobic PI film fabricated under optimized conditions was obtained by mechanical scratching, which gave the hydrophilic property only to the trench area. Finally, the patterning by selective deposition of ink materials was performed using the conductive silver nano-ink. The interface between the conductive nanoparticles and the flexible substrates were characterized by scanning electron microscope. The increase of the sintering temperature and metal concentration of ink caused the reduction of electrical resistance. The sintering temperature lower than resulted in good interfacial bonding between Ag electrode and PI film substrate.