This paper presents a new type of optical silicon accelerometer using deep reactive ion etching (DRIE) and micro-stereolithography technology. Optical silicon accelerometer is based on a mass suspended by four vertical beams. A vertical shutter at the end of the mass can only moves along the sensing axis in the optical path between two single-mode optical fibers. The shutter modulates intensity of light from a laser diode reaching a photo detector. With the DRIE technique for (100) silicon, it is possible to etch a vertical shutter and beam. This ensures low sensitivity to accelerations that are not along the sensing axis. The microstructure for sensor packaging and optical fiber fixing was fabricated using micro stereolithography technology. Designed sensors are two types and each resonant frequency is about 15 kHz and 5 kHz.

Abstract
 1. 서론
 2. 센서의 이론 및 설계
  2.1 센서의 동작원리
  2.2 센서의 구조
  2.3 모드 해석
  2.4 센서의 패키징
  2.5 제작공정
 3. 실험 결과
 4. 결론
 참고문헌

• 이승재(원광대학교 기계자동차공학부, 원광대학교 부설 공업기술개발연구소 연구위원) | Seung-Jae Lee