Nitrogen trifluoride (NF3) has been used as a novel etching and cleaning gas in semiconductor industry. Recently, the many studies about NF3 decomposition have been performed due to high global warming potential (GWP : 17,000). In this study, the role of conditioning agents such as H2, O2, and H2O (water vapor) in the destruction of NF3 gas using electron-beam technology is assessed in terms of the destruction and removal efficiency (DRE, %). The inlet concentration of NF3 was 1,000 ppm and the concentration of conditioning agents ranged from 250 to 1,500 ppm respectively and electron beam current was 5 mA. From the result, the by-products of NF3 decomposition were NO, N2O, and HF.