Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with N2, NH3 and Ar. According to an increase in the partial pressures of N2 and NH3, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with N2, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with NH3, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, NH3 pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high aaxis and c-axis orientations.

1. 서 론
 2. 실험 방법
 3. 결과 및 고찰
  3.1 스퍼터링 현상의 검증
  3.2 N2를 이용한 RF 마그네트론 스퍼터링법으로 제작한 AlN 박막
  3.3 NH3를 이용한 RF 마그네트론 스퍼터링법으로제작한 AlN 박막
  3.4 NH3를 이용한 RF 마그네트론 스퍼터링방법으로 제작한 강한 a축 배향 AlN 박막
  3.5 N2+NH3를 이용한 RF 마그네트론 스퍼터링법으로 제작한 AlN 박막
  3.6 투과율 측정
 4. 결 론
 감사의 글
 References

• 한창석(호서대학교 국방과학기술학과) | Chang-Suk Han Corresponding author