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기판 온도에 따른 수소화된 Al-doped ZnO 박막의 특성 변화 KCI 등재 SCOPUS

Effect of Growth Temperature on the Properties of Hydrogenation Al-doped ZnO Films

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한국재료학회지 (Korean Journal of Materials Research)
한국재료학회 (Materials Research Society Of Korea)
초록

This study examined the effect of growth temperature on the electrical and optical properties ofhydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramictarget (98wt.% ZnO, 2wt.% Al2O3). Various AZO films on glass were prepared by changing the substratetemperature from room temperature to 200oC. It was shown that intentionally incorporated hydrogen plays animportant role on the electrical properties of AZO:H films by increasing free carrier concentration. As a result,in the 2% H2 addition at the growth temperature of 150oC, resistivity of 3.21×10-4Ω·cm, mobility of 21.9cm2/V−s, electric charge carrier concentration of 9.35×1020cm-3 was obtained. The AZO:H films show a hexagonalwurtzite structure preferentially oriented in the (002) crystallographic direction.

저자
  • 탁성주 | Tark, Sung-Ju
  • 강민구 | 강민구
  • 이승훈 | 이승훈
  • 김원목 | 김원목
  • 임희진 | 임희진
  • 김동환 | 김동환