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3차원 소자 집적을 위한 Cu-Cu 접합의 계면접착에너지에 미치는 후속 열처리의 영향 KCI 등재 SCOPUS

Effect of Post-Annealing Conditions on Interfacial Adhesion Energy of Cu-Cu Bonding for 3-D IC Integration

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  • URLhttps://db.koreascholar.com/Article/Detail/296837
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한국재료학회지 (Korean Journal of Materials Research)
한국재료학회 (Materials Research Society Of Korea)
초록

1.5 μm-thick copper films deposited on silicon wafers were successfully bonded at 415˚C/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than 10.4 J/m2 as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than 300˚C had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over 400˚C. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

저자
  • 장은정 | Jang, Eun-Jung
  • 현승민 | 현승민
  • 이학주 | 이학주
  • 박영배 | 박영배