논문 상세보기
pp.222-227
In this study, BaTiO3 thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the BaTiO3 thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from 500-1000˚C. XRD results showed that the highest crystal quality was obtained from the samples annealed at 600-700˚C. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to 600˚C; and 80 nm grains were obtained at 700˚C. The surface roughness of the BaTiO3 thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was 700˚C. XPS results demonstrated that the binding energy of each element of the thin-film-type BaTiO3 in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at 1000˚C. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to 700˚C. All of the results obtained in this study clearly demonstrate that an annealing temperature of 700˚C results in optimal structural properties of BaTiO3 thin films in terms of their crystal quality, surface roughness, and composition.
