Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of PO2 = 3 % was obtained with > 80 % transmittance, carrier concentration of 1.12 × 1018 cm−3, and mobility of 1.18 cm2V− 1s−1. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
Acknowledgement
References

• 김철(서울과학기술대학교 NID융합기술대학원) | Cheol Kim
• 김성동(서울과학기술대학교 기계시스템디자인공학과) | Sungdong Kim
• 김은경(서울과학기술대학교 NID융합기술대학원) | Eunkyung Kim Corresponding author