A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), (CH3)2Si(OCH3)2, and CxHyOz by plasma enhanced chemical vapor deposition (PECVD) is presented. The multistep process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gapfilling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

1. Introduction
 2. Experimental Procedure
 3. Results and Discussion
 4. Conclusions
 References

• Woojin Lee(Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD)
• Tae Hyung Kim(Department of Fusion Chemical Engineering, Hanyang University)
• Yong-Ho Choa(Department of Fusion Chemical Engineering, Hanyang University) Corresponding author